TCAD-Based Simulation Method for the Electrolyte–Insulator–Semiconductor Field-Effect Transistor

Choi, Byoung Ho; Lee, Jieun; Yoon, Jinsu; Ahn, Jae-Hyuk; Park, Tae Jung; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

doi:10.1109/ted.2015.2395875

Cited by 31 publications

(12 citation statements)

References 10 publications

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“…Biomolecules are modeled as positive and negative charges on the gate oxide. Site-binding theory is used to model sensing mechanisms of target molecules with charges [13]. In multi-sensing simulations, negative/positive charges are attached on the source/drain side of the gate oxide respectively.…”

Section: Device Structure and Simulation Conditionsmentioning

confidence: 99%

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

Lee¹,

Kwon²,

Kim³

et al. 2017

JSTS:Journal of Semiconductor Technology and Science

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In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-in structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage (V t) shift and on-current (I D) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

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Section: Device Structure and Simulation Conditionsmentioning

confidence: 99%

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

Lee¹,

Kwon²,

Kim³

et al. 2017

JSTS:Journal of Semiconductor Technology and Science

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“…In this study, we rigorously investigate the physical origins of the high I on sensitivity in the proposed structure by using TCAD simulations. 9 Moreover, the doping condition of the Region sense is optimized to maximize the I on sensitivity.…”

Section: Introductionmentioning

confidence: 99%

New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region

Lee¹,

Kwon²,

Kim³

et al. 2017

j nanosci nanotechnol

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A new type of ISFET is proposed where the proposed ISFET channel is divided into a gatecontrolled region (Region gate and sensing region (Region sense. The ISFET is operated by controlling the gate voltage of the Region gate with the attached biomolecules on the gate dielectric of the Region sense. When the gate voltage is applied over the threshold voltage (V th , the channel resistance of the Region gate sharply decreases and the larger channel resistance of the Region sense limits the ISFET current. Thus, the on-current (I on of the ISFET is controlled by the attached biomolecule charge on the gate dielectric of the Region sense. Our proposed ISFET has many advantages over conventional ISFETs. From TCAD simulations, the proposed ISFET was found to have higher sensitivity according to pH levels than conventional ISFETs due to the unique limitation of the I on by the channel resistance change of the Region sense. Additionally, the field-dependent drift effect can be mitigated, because hydrogen ions or biomolecules in the solution are hardly affected by the gate voltage. Furthermore, the proposed ISFET has uniform I on change regardless of V th variation, because only the channel resistance of the Region sense determines the I on .

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“…Ion-Sensitive Field-Effect Transistor (ISFET), which was first developed around 1970 [1], have attracted much attention for pH sensing applications because of its promising advantages compared to traditional methods based on glass electrodes or litmus papers. While glass electrodes are fragile, vulnerable to external stimuli, and difficult to be miniaturized, ISFETs are more resistant to damage, smaller in size, have relatively high sensitivity, and can be used at high temperature [2,3]. Moreover, ISFET can be produced on the top of matured FET technology [4] and feasible for use with micro/nano-systems.…”

Section: Introductionmentioning

confidence: 99%

“…Research work on ISFET has been made through various approaches including experimental characterization [7,8], modeling [9][10][11][12], and software simulation [2,3,8]. Regarding software simulation approach, it is usually based on using technology computer-aided design (TCAD) software of conventional MOSFETs, then, introducing some modifications to conform to ISFET operation [2,3]. This sometimes requires the work in two different platforms [2], or it alternatively uses lumped parameters for the electrolyte layer [3].…”

Section: Introductionmentioning

confidence: 99%

“…Regarding software simulation approach, it is usually based on using technology computer-aided design (TCAD) software of conventional MOSFETs, then, introducing some modifications to conform to ISFET operation [2,3]. This sometimes requires the work in two different platforms [2], or it alternatively uses lumped parameters for the electrolyte layer [3]. To the author's knowledge, none of the simulation studies that have been made to investigate ISFET performance uses self-contained simulation tool dedicated for nanoscale ISFETs.…”

Section: Introductionmentioning

confidence: 99%

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A numerical simulation tool for nanoscale ion‐sensitive field‐effect transistor

Abdolkader

2016

Int J Numerical Modelling

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SUMMARYIn this work, a self-contained numerical simulation tool for nanoscale Ion-Sensitive Field-Effect Transistor (ISFET) is developed. The tool is based on merging nanoscale ballistic MOSFET analytical equations with the Gouy-Chapman-Stern model equations of ISFET to form a system of nonlinear equations that can be solved iteratively to yield ISFET output current. The numerical solution is accomplished using Newton-Raphson method with efficient trust-region-dogleg algorithm using MATLAB software coding. The tool is used to optimize the sensitivity and linearity of nanoscale ISFETs, and to study their dependence on reference voltage, drain current level, and gate-insulator thickness. Moreover, a comparison between three types of insulators, SiO 2 , Si 3 N 4 , and Al 2 O 3 , has been made. The tool is given the name: NIST (Nanoscale ISFET Simulation Tool). It can be used as a guide for design and optimization of nanoscale ISFETs and can be applied for both single-gate and double-gate structures.

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TCAD-Based Simulation Method for the Electrolyte–Insulator–Semiconductor Field-Effect Transistor

Cited by 31 publications

References 10 publications

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region

A numerical simulation tool for nanoscale ion‐sensitive field‐effect transistor

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