TCAD as an integral part of the semiconductor manufacturing environment

Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

“…According to the previous paragraph, it is possible to approximate the photocurrent generated in a P N j u n c t i o n during a l a s e r p u l s e v e r s u s t h e bias applied to its two electrodes with equation (1), (2) and (3).…”

“…Moreover TCAD analyses are needed, in order to well understand the phenomenon involved when an NMOS transistor is under PLS. TCAD takes into account the complex flow of semiconductor fabrication steps leading to detailed information on geometric shape and doping profile distribution of a semiconductor device in scope (like a MOS transistor) [2] to model its behavior. Three-dimensional simulation is computationally intensive and requires very long simulation times.…”

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

“…In silicon arriers will diffuse ce Charge Regions drain/substrate or hose electron-holes ectric field and an e generated [1]. ic PLS on a 90 nm of its state and its ociated with Finite ools necessary to eed, TCAD models on steps leading to and doping profile in scope (like a edict characteristics simulation models PSPICE [2]. Threelly intensive and Thus, only two n considered.…”

Multiscale Computer Aided Design of Microwave-Band P-I-N Photodetectors

“…At present time computer-aided design (CAD) exploitation for innovative high-tech production R&D acceleration is a common way (Minixhofer, 2006). This is especially important for microwave semiconductor component base with measurement equipment and experimental work's cost being considerably more expensive compare to that in lower frequency bands.…”