Impurities
in semiconductors, for example, lead-based hybrid perovskites,
have a major influence on their performance as photovoltaic (PV) light
absorbers. While impurities could create harmful trap states that
lead to nonradiative recombination of charge carriers and adversely
affect PV efficiency, they could also potentially increase absorption
via midgap energy levels that act as stepping stones for subgap photons
or introduce charge carriers via doping. To unearth trends in impurity
energy states, we use first principles density functional theory calculations
to extensively study partial substitution of Pb in methylammonium
lead bromide (MAPbBr3), a representative lead-halide perovskite.
Investigation of the density of states and energy levels related to
the transition of the substitutional defect from one charge state
to another reveals that several elements create midgap energy states
in MAPbBr3. We machine learned trends and design rules
from the computational data and discovered that a few easily computed
properties of the bromide compounds of any element can be used to
predict the energetics and energy levels of the substitutional defect
related to that element. The calculated Fermi level-dependent defect
formation energies lead to the observation that substitution by transition
metals, Zr, Hf, Nb, and Sc, and group V element Sb can shift the equilibrium
Fermi level and change the perovskite conductivity, as determined
by the dominant intrinsic point defects. Finally, metal-substituted
MAPbBr3 compounds of Bi, Sc, Ni, and Zr were experimentally
investigated, and while there was an improvement in the thin-film
morphology and an enhancement in charge-carrier lifetimes, no clear
evidence of subgap absorption features owing to the substituent being
incorporated in the MAPbBr3 lattice could be seen.