Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Petzold, Stefan; Piros, Eszter; Eilhardt, Robert; Zintler, Alexander; Vogel, Tobias; Kaiser, Nico; Radetinac, Aldin; Komissinskiy, Philipp; Jalaguier, E.; Nolot, Emmanuel; Charpin‐Nicolle, Christelle; Wenger, Christian; Molina‐Luna, Leopoldo; Miranda, E.; Alff, Lambert

doi:10.1002/aelm.202000439

Cited by 23 publications

(22 citation statements)

References 59 publications

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“…3 a. CFs were found to be formed by slowly increasing the forming voltage with a step of ‒0.05 V, and at ~ ‒5.0 V, electroforming was observed at I cc of 10µA. Similarly, during the first RESET of the device, with a step voltage of + 0.05 V, full RESET was achieved at + 1.2 V. By tuning the conductive filament size, the quantized conductance states were controlled due to APCs creation and annihilation process [ 4 , 28 ]. Figure 3 b shows the RESET I-V characteristics with the distinguishable stepwise decrease in currents, indicating different quantized conductance levels.…”

Section: Resultsmentioning

confidence: 99%

“…Stepwise increase in conductance due to precise atomic control of electron transport in conductive filaments leads to a higher memory density. G 0 = 2 e 2 /h (77 µS) is the quantum conductance unite, where e is the electronic charge, and the h is the Plank constant [ 21 , 22 ]. The atomic layer deposition (ALD) technique is promising for achieving high-density metal nanoparticles with controlled thickness [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

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Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

et al. 2022

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Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization behavior to achieve the high-density memory application. Stepwise change in conductance under DC and pulse voltage confirms the quantized conductance states with integer and half-integer multiples of G0. Reactive TiN-NPs inside the switching layer helps to form and rupture the atomic scale conductive filaments due to enhancing the local electric field inside. Bipolar resistive switching characteristics at low SET/RESET voltage were obtained with memory window > 10 and stable endurance of 103 cycles. Short-term and long-term plasticities are successfully demonstrated by modulating the pre-spike number, magnitude, and frequency. The quantized conductance behavior with promising synaptic properties obtained in the experiments suggests HfAlOx/TiN-NP/HfAlOx switching layer is suitable for multilevel high-density storage RRAM devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

et al. 2022

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“…These are referred to as the linear and nonlinear conduction modes in quantum‐point contacts, respectively, and have been reported many times in RRAM devices. [ 82,83 ] In this connection, it is worth emphasizing that caution should be exercised with the use of the term conductance quantization in RRAM devices: [ 18 ] as experimentally observed, only for simple s‐electron metals the transmission probability for the conductance channels is expected to be close to integer values as expressed by Equation (). [ 71,84 ] For this reason, observation of quantum steps in the conduction characteristics of RRAMs should be more appropriately considered to be in the quantum (rather than in the quantized) regime of conductance.…”

Section: Ballistic Transport In Nanosized Filamentsmentioning

confidence: 99%

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

et al. 2022

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Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next‐generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic‐sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.

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“…Many experimental results on resistive switching materials have been interpreted in terms of conduction through atom-sized filamentary structures [ 127 ]. This is the case of a wide variety of binary and ternary oxides such as SiO x [ 128 , 129 , 130 , 131 ], HfO 2 [ 132 , 133 , 134 , 135 , 136 , 137 , 138 , 139 ], Ta 2 O 5 [ 140 , 141 , 142 ], NiO [ 143 , 144 ], ZnO [ 145 , 146 ], a-Si:H [ 147 ], TiO 2 [ 148 ], V 2 O 5 [ 149 ], YO x [ 150 ], and BiVO 4 [ 151 ]. Nonlinear effects in HfO 2 were also reported by Degraeve et al [ 152 ] and in CeO x /SiO 2 -based structures by Miranda et al [ 153 ].…”

Section: Rram Quantum Point Contact Modeling Thermal Effectsmentioning

confidence: 99%

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

et al. 2021

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Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.

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Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Cited by 23 publications

References 59 publications

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

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