2019
DOI: 10.1039/c9cp04689e
|View full text |Cite
|
Sign up to set email alerts
|

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

Abstract: van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

2
19
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
8

Relationship

4
4

Authors

Journals

citations
Cited by 49 publications
(21 citation statements)
references
References 49 publications
2
19
0
Order By: Relevance
“…Several approaches have been considered to change the electronic structure of 2DM, such as substitutional doping, defect engineering, application of an electric field or strain, surface functionalization by adatoms, and altering the edge states. [ 37–78 ]…”
Section: Introductionmentioning
confidence: 99%
“…Several approaches have been considered to change the electronic structure of 2DM, such as substitutional doping, defect engineering, application of an electric field or strain, surface functionalization by adatoms, and altering the edge states. [ 37–78 ]…”
Section: Introductionmentioning
confidence: 99%
“…[210,211] In terms of type-I heterojunction, the CB of semiconductor I is higher than that of semiconductor II while its VB is lower than that of semiconductor II, forming straddling bandgap (e.g., SnSe 2 /MoS 2, MoS 2 / ReS 2 , and MoS 2 /ZnO QDs) (Figure 9A). [212][213][214] However, the photogenerated carriers are all migrated into semiconductor II, resulting in poor subsequent charge separation effect. [210,211,215] Unlike the type-I heterojunction, the band positions of the type II heterojunction are at the best levels, that is, the staggered gap.…”
Section: Construction Of Mos 2 -Based Heterojunctionmentioning
confidence: 99%
“…Similar to the control of dimensionality 16 and composition, 17 stacking via van der Waals (vdW) 18 interactions is also an effective approach to tune the properties of a material 19,20 and to design viable electronic devices. 21,22 For instance, using DFT calculations, SiC/TMDs, 23 MoS 2 /Si, 24 graphene/MoSeS, 25 Janus-MoSeTe/X(OH) 2 (X = Ca, Mg), 26 SnSe 2 /MoS 2 , 27 GeC-MSSe (M = Mo, W), 28 graphene/WSeTe, 29 graphene/Ga 2 SSe 30 and TMDs/ZnO 31 have already been investigated in detail. Many blueP-based vdW heterostructures, such as blueP/graphene and blueP/g-GaN, 32 blueP/BlackP, 33 blueP/TMDCs, 34,35 blueP/graphene, 36 blueP/AlN 37 and blueP/Mg(OH) 2 , 38 have also been fabricated and investigated.…”
Section: Introductionmentioning
confidence: 99%