Tailoring Surface Properties of ArF Resists with Functionally Graded Materials (FGM)

Advances in Patterning Materials for 193 nm Immersion Lithography

“…The surfaces of topcoat-free resist films show similar surface roughness as standard 193 nm photoresists and undergo negligible roughening upon exposure to developer. , Surface segregation of the additive has been shown to occur uniformly across the wafer as measured by contact angles, PAG leaching, and TOF-SIMS depth profiling . In addition, segregation has been found to occur during the spin-casting step with little dependence upon the postapplication bake time or temperature. ,, …”

“…Simple resist-type copolymer additives such as 67 (Figure ) consist solely of a surface-active monomer and a protected methacrylic acid. , The use of fluorine-containing protecting groups such as a fluorinated acetal in 68 or tertiary ester in 69 allows a single structure to perform both roles. While these resist-type additives exhibit higher levels of surface segregation relative to many topcoat-type additives (as shown in Figure ) and afford very low PAG leaching, the extremely hydrophobic nature of fully protected resist-type additives can result in large advancing contact angles and base wettability issues in the nonexposed regions .…”

Depth Profiling Analysis of Organic Materials by Using ToF-SIMS and Gradient Shaving Preparation

“…measurement of shear strength and peel off strength), has been converted to oblique cutting (which should rather be called gradient shaving) preparation since several years. It is possible to shave off, at a very shallow angle, sample surface by precisely driving the knife made of diamonds by a piezoelectric device, and using a driving speed difference between horizontal and perpendicular directions, thereby shaving can be achieved at very shallow angle with respect to sample surface, that is, the order of less than 0.1 degree, and typically 0.02 degrees [5][6][7]. Figure 3 illustrates the sample preparation using a specialized system (a gradient shaving instrument).…”

Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation

“…As a method of post KrF lithography, ArF lithography was developed and has been widely used in mass production. For ArF lithography, resist polymers based on alicyclic hydrocarbon compounds such as adamantane, norbornane, and tricyclodecane have been developed [4][5][6][7][8][9] to replace PHS because of the transparency to the wavelength of 193 nm. These polymers have been widely used for sub-60-nm fabrication and may be used for 32 nm fabrication with immersion and/ or double-patterning technologies.…”