Ta/Ni/Ta multilayered ohmic contacts on n-type SiC

Yang, Huan; Peng, Tianhuan; Wang, W.J.; Zhang, D.F.; Chen, X.L.

doi:10.1016/j.apsusc.2007.06.022

Cited by 15 publications

(6 citation statements)

References 26 publications

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“…Generally, annealing under excessive high temperature is not allowed to avoid serious reactions occurred at the interface [4]. Many transition metals and metal combinations, such as Al, Fe, Cr, Ti, Co, Pt, Ni, Ti/Al, Ta/Pt, Ti/Pt/Au, Ta/Ni/Ta and Ti/Ni/Ti/Au, have been studied to form excellent contacts to n-or p-type SiC [2,3,[5][6][7][8][9][10][11][12][13]. Most of work is mainly focused on the interface reactions between different metals and SiC from a view point of material science [3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

Zhang

Teng

Yuan

et al. 2009

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

Zhang

Teng

Yuan

et al. 2009

Applied Surface Science

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“…Further reaction with increasing bonding time produces binary Ta silicides and a ternary compound Ta 5 Si 3 C. [4] Carbon is consumed to produce vacancies at the interface of Ta multilayer films on the SiC substrate, which transforms Schottky to ohmic contacts in high-temperature metal/semiconductor nonhomogeneous joints. [5] Tungsten is a high-melting point material and has a relatively low work function (4.55 eV). It has the potential to be used to fabricate SiC-based devices because of the higher thermodynamic stability of W silicides, which would lead to greater resistance to oxidation in high-temperature applications, and less probability of decomposition in composite structures.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Assessment of the Si-Ta and Si-W Systems

Guo

Yuan

Sun

et al. 2009

J. Phase Equilib. Diffus.

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The knowledge of phase diagram and thermodynamic properties of the Si-Ta and Si-W systems is of technical importance for metallic contacts between Ta, W, and SiC in electrical and electronic devices. The phase diagram and thermodynamic properties of the Si-Ta and Si-W systems were assessed using the CALPHAD approach with available experimental data. The intermetallic compounds of the two systems were modeled as stoichiometric ones. A set of self-consistent thermodynamic parameters were obtained and the calculated phase equilibria were found to be in reasonable agreement with most experimental data. The calculated enthalpies of formation of the silicides in the Si-Ta and Si-W systems were compared with the reported values. The enthalpies of mixing of liquid at 2000 K in similar Si-transition metal systems were used for comparison in order to judge the rationality of the calculations. The assessed thermodynamic descriptions of the Si-Ta and Si-W binary systems will serve as part of the thermodynamic database for the Si-C-M (M: Ta and W) alloys.

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“…Tantalum-based materials have quite low resistivity and are thermally stable at high operating temperatures, thus they are expected to be potentially promising metals for ohmic contacts [14]. In our previous study [15], it was observed that Ta/Ni/Ta contacts on nSiC showed good ohmic characteristic after high temperature annealing. The incorporation of Ta into the contacts is expected to prevent the precipitation of C atoms due to the reaction between the noncarbide former metals and SiC.…”

Section: Introductionmentioning

confidence: 98%