Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

Zhang, Z.; Teng, Jie; Yuan, Wenxia; Zhang, F.F.; Chen, G.H.

doi:10.1016/j.apsusc.2009.03.018

Cited by 27 publications

(22 citation statements)

References 31 publications

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“…Formation of ohmic contacts to SiC is typically manufactured by the deposition of metals followed by hightemperature annealing (HTA: ∼1000 • C) [3][4][5]. As was shown previously [4][5][6][7][8][9][10][11] Nickel is the most widely used metal for fabrication of ohmic contacts to n-type SiC due to the formation of contacts with very low specific contact resistance (∼10 −6 Ω cm 2 ) 2 ISRN Nanomaterials [2,3]. In spite of numerous publications and progress in study of interaction between Ni and SiC, there are still many open questions concerning mechanism of contact formation and its reliability.…”

Section: Introductionmentioning

confidence: 99%

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

et al. 2012

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Three samples of 4H polytype of silicon carbide (4H-SiC) covered with the following sequence of layers: carbon/nickel/silicon/nickel/silicon were investigated with micro-Raman spectroscopy. Different thermal treatments of each sample result in differences of carbon layer structure and migration of carbon atoms thorough silicide layer. Two ranges of Raman shift were investigated. The first one is placed between 1000 cm−1 and 2000 cm−1. The main carbon bands D and G are observed in this range. Analysis of the positions of these bands and their intensity ratio enables one to determine the graphitization degree of carbon layer. Additional information about the changes of the carbon layer structure was derived from analysis of 2D band placed around 2700 cm−1. Application of deep ultraviolet excitation delivered information about the structure of carbon layer formed on the free surface of silicides and the distribution of the carbon inside the silicide layer.

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Section: Introductionmentioning

confidence: 99%

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

et al. 2012

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“…Co only reacts with Si, whereas free C accumulates and finally diffuses throughout the loose product layer to the top surface due to low solubility in Co [10]. In a thick (>100 nm) metal/SiC contact, the diffusion of species is the rate-determining step for the interfacial process [23]. Within the Co (200 nm thick)/SiC contact, the decrease of Co concentration from 86 to 14% was used to approximately determine thickness of diffusion layer according to the AES profiles.…”

mentioning

confidence: 99%

Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

Yang

et al. 2011

Journal of Nanomaterials

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Single- and few-layer graphene sheets were fabricated by selective chemical reactions between Co film and SiC substrate. A rapid cooling process was employed. The number of layers and crystallinity of graphene sheets were controlled by process parameters. The formation mechanism of graphene was highly sensitive to carbon diffusion. Free carbon precipitated and then moved across the product layer that was composed mainly of cobalt-silicides. The graphene layer formed homogeneously on the surface and then transferred to the other substrate. This could provide a method for high-quality fabrication of wafer-sized graphene sheets.

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“…For the samples annealed at 1000 °C, the value of ρ c for contacts formed at implant doses of 1 x 10 13 and 1 x 10 14 C ions/cm 2 was reduced by an order of magnitude (0.7-5.0 x 10 -6 Ω.cm 2 ) compared with the equivalent contacts annealed at lower temperatures. For the higher implant dose of 1 x 10 15 ions/cm 2 in combination with a 1000 °C anneal, the measurements of ρ c were 2.0 -4.0 x 10 -5 Ω.cm 2 . These results have indicated no clear dependence of ion species (C or P ions) on ρ c as a function of dose and annealing temperature.…”

Section: Methodsmentioning

confidence: 94%

“…For n-SiC, the most commonly used ohmic contact has been the metal Ni for which annealing at 900-1000 °C was required in order to obtain a minimum in ρ c [1]. However, the formation of Ni 2 Si phase during annealing at 900-1000 °C has been accompanied by a segregation of carbon, the generation of interfacial voids and a roughening of the surface morphology of the metal [2]. These defects have acted to degrade the mechanical adhesion of the metal/n-SiC interface.…”

Section: Introductionmentioning

confidence: 99%

Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

et al. 2017

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The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

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Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

Cited by 27 publications

References 31 publications

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

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