Systematic Study of the Effects of Modulation p-Doping on 1.3-$\mu{\hbox {m}}$ Quantum-Dot Lasers

GaAs-Based Quantum Dot Lasers

“…One alternative solution to this problem is to introduce an excess acceptor (p-type) concentration into the QD barrier states either through direct or modulation acceptor doping. Consequently, these improved characteristics were anticipated to improve overall modulation performance compared to conventional SCH laser diodes (Alexander et al, 2007;Deppe et al, 2002;Sandall et al, 2006;. 10.22, the excess hole concentration from the p-doped barrier states is fed into the QD ground state to balance Responses measured for bias currents of 8 and 30mA indicating 3-dB bandwidths of $10.5 and >20GHz, respectively (Bhattacharya et al, 2000).…”

Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers

“…However, one of the major drawbacks of QD lasers concern the modulation bandwidth, which remains still limited at room temperature to about 10-12 GHz within 1.3-1.6 µm operating wavelengths [7]. In order to enhance the modulation properties several solutions have been explored including injection-locking [8], tunnelling injection [9] or p-doping [10]. However, for standard QD lasers (namely without any artificial solutions), the modulation bandwidth is still much lower than the best values reported on quantum well (QW) lasers [11].…”

Dynamics of Quantum-Dot Mode-Locked Lasers With Optical Injection

“…Manuscript received escape [7]. For mode-locked lasers however, these aspects of active region doping are not necessarily beneficial.…”