Systematic studies on reactive ion etch-induced deformations of organic underlayers

Glodde, Martin; Engelmann, Sebastian; Guillorn, Michael A.; Kanakasabapathy, Sivananda; Mclellan, Erin; Koay, Chiew-Seng; Yin, Yunpeng; Sankarapandian, M.; Arnold, John; Petrillo, Karen; Brink, Markus; Miyazoe, Hiroyuki; Silva, E. Anuja de; Yusuff, Hakeem; Yoon, Kwang Sub; Wei, Yayi; Wu, Chung-Hsi; Varanasi, Pushkara Rao

doi:10.1117/12.879442

Cited by 16 publications

(8 citation statements)

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“…As mentioned above, the material must adhere well both to the glass handler and the bonding adhesive, it must be thermally stable up to at least the maximum bonding temperature, it must be highly absorbing at 355 nm, and for ease of inspection of the bonded interface throughout 3D wafer processing, it should be as transparent as possible at optical wavelengths. At first this might seem to be a fairly stringent set of requirements, but it so happens that there exists a class of materials used in advanced deep-UV lithography known variously as inert underlayer (UL) films, spin-on carbon (SOC) films and organic planarizing layers (OPL), and while originally designed for an entirely different purpose [5], many of these do meet the requirements. OPL materials are produced by a number of suppliers, and they typically are used to planarize pre-existing patterns to enable lithography of the subsequent level [5].…”

Section: Choice Of Uv Ablation Materialsmentioning

confidence: 99%

“…At first this might seem to be a fairly stringent set of requirements, but it so happens that there exists a class of materials used in advanced deep-UV lithography known variously as inert underlayer (UL) films, spin-on carbon (SOC) films and organic planarizing layers (OPL), and while originally designed for an entirely different purpose [5], many of these do meet the requirements. OPL materials are produced by a number of suppliers, and they typically are used to planarize pre-existing patterns to enable lithography of the subsequent level [5]. Their resistance to reactive ion etching is used to transfer very fine patterns in photoresist to the substrate.…”

Section: Choice Of Uv Ablation Materialsmentioning

confidence: 99%

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Advanced wafer bonding and laser debonding

Andry¹,

Budd²,

Polastre³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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This paper describes the development of a wafer debonding process and tooling based on 355 nm UV laser ablation. While laser-assisted debonding of polyimide-based materials at shorter UV wavelengths has been described previously, this work describes a method having two major advantages over earlier methods: 1) a significantly more compact and affordable diode-pumped solid state 355 nm laser source is combined with a high-speed optical scanner to create a rapid debonding module with a small footprint, and 2) the addition of a very thin UV ablation layer to the glass handler ensures that release will occur, independently of the adhesive used to bond the wafer. The first enhancement is designed to enable high-throughput debonding at lower cost than earlier laser tools, while the second enhancement is designed to greatly expand the adhesive choices available to device manufacturers. Flexibility in material choice for both the release layer and the adhesive layer permits the manufacturer to meet post-wafer thinning process and temperature compatibility needs. In this research paper, the many benefits of this novel room-temperature debonding technology are reported along with examples of successfully demonstrated adhesives and release layers.

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Section: Choice Of Uv Ablation Materialsmentioning

confidence: 99%

Section: Choice Of Uv Ablation Materialsmentioning

confidence: 99%

Advanced wafer bonding and laser debonding

Andry¹,

Budd²,

Polastre³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…To meet the anti-reflection and planarization requirements, the CUL layer is typically coated thick leading to high aspect ratios during pattern transfers. One of the issues of CUL especially as the critical dimension (CD) is below 35nm is that the UL lines start to deform commonly known as line wiggling [1][2][3][4]. The silicon hardmask has demonstrated good reflectivity control and reasonable etch selectivity.…”

Section: Introductionmentioning

confidence: 99%

Functional Properties of Novel Metallic Hard Masks

Padmanaban¹,

Cho²,

Yao³

et al. 2013

J. Photopol. Sci. Technol.

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Hard masks play an important role in pattern transfer to the desired substrate in the semiconductor lithography processes. Organic and inorganic type hard masks are used. While most organic hard masks such as carbon and siloxane type are solution spin coated, inorganic type hard masks such as SiON and SiN are either chemical vapor deposited (CVD) or atomic layer deposited (ALD). Future generation of lithography processes require hard masks with higher resistance to fluorinated plasma and materials that can be easily wet stripped after pattern transfer process to prevent dry etch damage to the substrate underneath.The present paper describes formation and functional properties of novel metal oxide hard masks by simple solution spin coating process. These novel metal oxide hard masks offer good etch selectivity and can easily be partially or fully wet strippable using commonly used chemicals in the FABs. The spin coatable composition has good long-term shelf life and pot life stability based on solution LPC analysis and wafer defect studies. The hard mask material absorbs DUV wavelengths and can be used as a spin-on inorganic or hybrid antireflective coating to control substrate reflectivity under DUV exposure of photoresist. At the same time they are transparent at 500-700nm for alignment mark identification and can be spin coatable up to 450nm thickness with good film quality. Some of these metal-containing materials can be used as an underlayer in EUV lithography to significantly enhance sensitivity of the photoresist. Specific metal hard masks are also developed for via or trench filling applications in IRT processes. The materials have shown good coating and lithography performance with a film thicknesses as low as 10 nm under ArF dry or immersion conditions.

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“…With the introduction of polymethacrylate photoresist polymers in 193-nm (ArF) lithography came a reduction in the thickness of the photoresist, limitations for depth of focus at high numerical aperture (NA), and other factors that made the photoresist no longer a capable of acting as a mask for transfer into the substrate. 1,2 Therefore, a new multilayer scheme consisting of photoresist, silicon-containing hardmask material (Si-HM), and spin-on carbon (SOC), also referred to as a carbon hardmask, has been developed and implemented to achieve smaller nodes. The goal of the multilayer scheme is to transfer the pattern or line from the photolithography process into the substrate.…”

Section: Introductionmentioning

confidence: 99%

Evaluating spin-on carbon materials at low temperatures for high wiggling resistance

et al. 2013

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Spin-on carbon (SOC) materials play an important role in the multilayer lithography scheme for the mass production of advanced semiconductor devices. One of the SOC's key roles in the multilayer process (photoresist, silicon-containing hardmask, SOC) is the reactive ion etch (RIE) for pattern transfer into the substrate. As aspect ratios of the SOC material increase and feature sizes decrease, the pattern transfer from SOC to substrate by a fluorine-containing RIE induces severe pattern deformation ("wiggling"), which ultimately prevents successful pattern transfer into the substrate. One process that reduces line wiggling is a high-temperature (>250°C) post-application bake of the SOC material. In this study, we developed a process for evaluating SOC materials with respect to their pattern transfer performance. This process allowed us to evaluate line-wiggling behavior with several SOC materials at lower bake temperatures. This paper will discuss novel materials design in relation to high-aspect-ratio SOC layers and wiggling resistance.

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Systematic studies on reactive ion etch-induced deformations of organic underlayers

Cited by 16 publications

References 0 publications

Advanced wafer bonding and laser debonding

Advanced wafer bonding and laser debonding

Functional Properties of Novel Metallic Hard Masks

Evaluating spin-on carbon materials at low temperatures for high wiggling resistance

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