Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO₂ Resistive Switching Materials

Abstract

Metal oxides have attracted significant interest in recent decades owing to their feasible application in resistive switching devices, semiconductor devices, heterogeneous catalysts, optoelectronic devices, and gas-sensing systems. [1][2][3] Moreover, the potential of these metal oxides to substitute SiO 2 gate dielectrics in metaloxide-semiconductor (MOS) systems to overcome the leakage current limitation strengthens the quest in academic and industry curiosity.

Collagen membrane functionalized with magnesium oxide via room-temperature atomic layer deposition promotes osteopromotive and antimicrobial properties

“…Out of the two, PVD typically requires high processing temperature and is not suitable for coating complex structures [ 20 ]. There have been many advances in PVD techniques, such as ion-beam assisted deposition (IBAD) [ 21 , 22 ] and RF sputtering [ 23 ], to allow lower deposition temperatures, but these usually involve the use of high energy sources which might damage the collagen structure [ 24 , 25 ]. In fact, IBAD of MgO has also been reported at room temperature on glass(SiO 2 ) substrates [ 22 ], however due to the well-documented damage ion beams can have on organic matter, it was not considered suitable.…”