System Design Technology Co-Optimization for 3D Integration at &lt;5nm nodes

Song, Seung Chul; Nallapati, Giri; Khan, Irfan; Nikfar, Nader; Yan, Biao; Miranda, Miguel A.; Lim, Bruce; Nagarajan, Mali; Park, Joon‐Young; Srinivas, V.; Langari, Reza; Chava, Bharani; Sanaka, Venu; Boynapalli, Venu; Gupta, Phalguni; Pandey, Shree; Xie, Bin; Feng, Pingyun; Choi, Jihong; Rakshit, Titash; Shenoy, R. N.; Nemani, Mahadev; Verrilli, Colin; Zhu, Jintian; Nakamoto, Mark; Zhao, Lily; Sun, Yu; Atallah, Francois; Kim, Jonghae; Attar, Rashid; Chidambaram, P.R.

doi:10.1109/iedm19574.2021.9720530

Cited by 5 publications

(1 citation statement)

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“…Indeed, the electrical performances of aggressively scaled transistors are strongly impacted by selfheating, ultrafast thermal transport and thermal conductivity degradation, all of which link to electron-phonon coupling which is not well understood at the nanoscale. The integration of this technology in the mainstream design flow is thus not straightforward and requires design technology cooptimization (DTCO) at an early stage [6][7]. This paper is an important step to achieve this goal.…”

Section: Introductionmentioning

confidence: 99%

3-D Logic Circuit Design-Oriented Electrothermal Modeling of Vertical Junctionless Nanowire FETs

Mannaa,

Poittevin,

Marchand

et al. 2023

IEEE J. Explor. Solid-State Comput. Devices Circuits

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This work presents new insights into 3D logic circuit design with vertical junctionless nanowire FETs (VNWFET) accounting for underlying electrothermal phenomena. Aided by the understanding of the nanoscale heattransport in VNWFETs through multiphysics simulations, the SPICE-compatible compact model captures temperature and trapping effects principally through a shift of the device threshold voltage. Circuit level simulations indicate a strong impact of temperature variation on functionality and figures of merits such as energy-delay products. Subsequent guidelines for design considerations are discussed that are intended to provide feedback for technology improvements.

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Section: Introductionmentioning

confidence: 99%