System and process learning in a full-field, high-power EUVL alpha tool

Ballard, W. P.; Tichenor, Daniel A.; O’Connell, Donna J.; Bernardez, Luis J.; Lafon, Robert E.; Anderson, R. J.; Leung, Alvin H.; Williams, Kenneth; Haney, Steven J.; Perras, Yon E.; Jefferson, Karen L.; Porter, Therese L.; Knight, Daniel J.; Barr, P. K.; Vreugde, James L. Van De; Campiotti, Richard H.; Zimmerman, Mark D.; Johnson, Terry A.; Klebanoff, Leonard E.; Grunow, Philip A.; Graham, Samuel; Buchenauer, D.; Replogle, William C.; Smith, Tony G.; Wronosky, John B.; Darnold, Joel R.; Blaedel, Kenneth L.; Chapman, Henry N.; Taylor, John S.; Hale, Layton C.; Sommargren, Gary E.; Gullikson, Eric M.; Naulleau, Patrick; Goldberg, Kenneth A.; Shields, Harry; Pierre, Randall J. St.; Ponti, Samuel

doi:10.1117/12.482791

Cited by 7 publications

(3 citation statements)

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“…The two samples under study were placed inside the source chamber at a distance of 15 cm away from the source nozzle, with unobstructed view of the plasma, and were exposed to 11.5 million EUV pulses. Considering that several hundred million pulses are usually applied in order to assess optics lifetime inside the EUVL tool 13 , the overall number of pulses that the witness samples were exposed to is not considered particularly high. However, even with 11.5 million pulses the present test was deemed harsh given that the number of Mo/Si bilayers on the samples was only N=10, compared to N=40 or more that exist on actual EUVL optics.…”

Section: Exposure To Euvl Source Environmentmentioning

confidence: 99%

Smoothing of diamond-turned substrates for extreme ultraviolet illuminators

et al. 2004

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Condenser optics in extreme ultraviolet lithography (EUVL) systems are subjected to frequent replacement as they are positioned close to the illumination source, where increased heating and contamination occur. In the case of aspherical condenser elements made by optical figuring/finishing, their replacement can be very expensive (several hundred thousand dollars). One approach to this problem would be to manufacture inexpensive illuminator optics that meet all required specifications and could be replaced at no substantial cost. Diamond-turned metal substrates are a factor of 100 less expensive than conventional aspherical substrates but have insufficient finish, leading to unacceptably low EUV reflectance after multilayer coating. In this work it is shown that, by applying a smoothing film prior to multilayer coating, the high spatial frequency roughness of a diamond-turned metal substrate is reduced from 1.76 to 0.27 nm rms while the figure slope error is maintained at acceptable levels. Metrology tests performed at various stages of the fabrication of the element demonstrated that it satisfied all critical figure and finish specifications as illuminator. Initial experimental results on the stability and performance of the optic under a real EUVL plasma source environment show no accelerated degradation when compared to conventional substrates.

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Section: Exposure To Euvl Source Environmentmentioning

confidence: 99%

Smoothing of diamond-turned substrates for extreme ultraviolet illuminators

et al. 2004

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“…High EUV output results in high erosion rates [58,59]. Therefore, it will be more difficult to meet the 30000 h exposure requirement when laser powers become greater in the future [60].…”

Section: Opticsmentioning

confidence: 98%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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“…Two examples of such systems are water-window x-ray microscopes 1,2 and tools for EUV lithography ͑EUVL͒. [3][4][5] Unfortunately, the limited power available from existing compact EUV and soft-x-ray sources still limits the performance of these tools. However, several of these systems have relatively small fields of view and therefore benefit from small, high-brightness laser-plasma sources for photon economy.…”

Section: Introductionmentioning

confidence: 99%

Improved emission uniformity from a liquid-jet laser-plasma extreme-ultraviolet source

2004

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Many modern compact soft-x-ray and extreme-ultraviolet (EUV) imaging systems operate with small fields of view and therefore benefit from the use of small high-brightness sources. Such systems include water-window microscopes and EUV lithography tools. We show that the photon losses in such systems can be minimized while uniformity of object-plane illumination is maintained by controlled scanning of the source. The improved collection efficiency is demonstrated both theoretically and experimentally for a scanned laser-plasma source compared with static sources. A prospective aerial image microscope and a liquid-xenon-jet laser-plasma source are offered as examples of modern imaging tools that may benefit from such scanning of the source.

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System and process learning in a full-field, high-power EUVL alpha tool

Cited by 7 publications

References 0 publications

Smoothing of diamond-turned substrates for extreme ultraviolet illuminators

Smoothing of diamond-turned substrates for extreme ultraviolet illuminators

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Improved emission uniformity from a liquid-jet laser-plasma extreme-ultraviolet source

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