2009
DOI: 10.1063/1.3271352
|View full text |Cite
|
Sign up to set email alerts
|

Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers

Abstract: Heusler alloy Co 2 FeAl was employed as ferromagnetic layers in Co 2 FeAl/Ru/Co 2 FeAl synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm takes on strongly antiferromagnetic coupling, which maintains up to 150 o C annealing for 1 hour. The structure has a very low saturation magnetization M s of 425 emu/cc, a low switching field H sw of 4.3 Oe and a high saturation field H s of 5257 Oe at room temperature, which are favorable for application in… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
10
0

Year Published

2012
2012
2020
2020

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(10 citation statements)
references
References 14 publications
0
10
0
Order By: Relevance
“…Further, SAFs fabricated using a range of ferromagnetic components have been explored including Ni-Fe [38], Co [39,40] and (Fe,Co)N [41]. Additionally, ferromagnetic components created from highly spin-polarized Heusler alloys such as Co 2 FeAl have been reported [42]. In this work, we demonstrate that higher frequencies (in excess of 20 GHz) can be obtained for the zero-field optic mode using SAFs with the structure Co 0.2 Fe 0.6 B 0.2 (5 nm)/Ru(t Ru )/Co 0.2 Fe 0.6 B 0.2 (5 nm), where t Ru is the Ru layer thickness.…”
Section: Introductionmentioning
confidence: 99%
“…Further, SAFs fabricated using a range of ferromagnetic components have been explored including Ni-Fe [38], Co [39,40] and (Fe,Co)N [41]. Additionally, ferromagnetic components created from highly spin-polarized Heusler alloys such as Co 2 FeAl have been reported [42]. In this work, we demonstrate that higher frequencies (in excess of 20 GHz) can be obtained for the zero-field optic mode using SAFs with the structure Co 0.2 Fe 0.6 B 0.2 (5 nm)/Ru(t Ru )/Co 0.2 Fe 0.6 B 0.2 (5 nm), where t Ru is the Ru layer thickness.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, synthesis of highly ordered CFA thin films continues to be a challenging task. Very few attempts have made to grow CFA thin films on Si substrate 12 13 14 , a combination which is potentially advantageous for the silicon spintronics. In them, a limited success is reported with regards to achieving B2 ordered CFA films 12 .…”
mentioning
confidence: 99%
“…Very few attempts have made to grow CFA thin films on Si substrate 12 13 14 , a combination which is potentially advantageous for the silicon spintronics. In them, a limited success is reported with regards to achieving B2 ordered CFA films 12 . For obtaining the ordered CFA phase, it is highly desirable that while the substrate is maintained at the optimum T s the surface mobility of the ad-atom during the growth of the films is sufficiently high so that they can lower their energy by reaching to their respective atomic sites.…”
mentioning
confidence: 99%
“…These chemical disorders strongly influence the physical properties and result in additional states at the Fermi level therefore reducing the halfmetallicity or spin polarization [7,8]. It is challenging to obtain the ordered L2 1 phase of Heusler alloys in as-deposited films, which is expected to possess the lowest Gilbert damping as compared to the other phases [4,[9][10][11]. Therefore, in the last decade several attempts have been made to grow the ordered phase of CFA thin films employing different methods [4,[9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…It is challenging to obtain the ordered L2 1 phase of Heusler alloys in as-deposited films, which is expected to possess the lowest Gilbert damping as compared to the other phases [4,[9][10][11]. Therefore, in the last decade several attempts have been made to grow the ordered phase of CFA thin films employing different methods [4,[9][10][11][12][13]. The most successful attempts used post-deposition annealing to reduce the anti-site disorder by a thermal activation process [4].…”
Section: Introductionmentioning
confidence: 99%