Synthesis Thin Films SnO2 with Doping Indium by Sol-gel Spin coating

2020

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This research succeeded in creating a thin layer of SnO2 and SnO2: In+Al through a synthesis process with the sol-gel spin-coating technique on a glass substrate. The manufacture of this thin layer uses the basic material SnCl2.2H2O, and the doping material InCl3.4H2O and AlCl3. This thin layer is made with variations in doping concentration, number of layers, and heating temperature. The results of the synthesis of SnO2: In+Al films show that the thin film formed is more transparent when the doping concentration and the number of layers is increased. Meanwhile, the thin layer that forms is increasingly not transparent when heated at higher temperatures

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis of SnO2 Thin Coatings by Indium and Aluminum Mixed Doping using the Sol-Gel Spin-Coating Technique

Munandar

2020

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“…The process of making a thin layer was carried out using a spin coater at a speed of 2000 rpm for 3 minutes (Hakim et al, 2019). The thin layer that has been formed is then dried at 100 o C (Muliyadi, et al, 2019).…”

Section: Thin Film Manufacturing Process and Characterizationmentioning

confidence: 99%

“…That is, the characteristics possessed by SnO2 can be changed by injecting other atoms as doping. Based on several studies that have been carried out, SnO2 is usually doped with aluminum (Imawanti, et al, 2017), fluorine (Muliyadi, et al, 2019), antimony (Khorshidi, et al, 2019), indium (Hakim, et al, 2019), and zinc. (Hegazya, et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

Alam

et al. 2021

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Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used

“…The characteristics of SnO2 can be modified as needed by adding another element called dopant (Ikraman et al, 2017). SnO2 is usually doped with aluminum (Imawanti et al, 2017), fluorine (Kendall et al, 2020), and indium (Hakim et al, 2019), zinc (Hegazy et al, 2019, and antimony (Khorshidi et al, 2019) . Also, SnO2 can be doped with a mixture of aluminum and zinc (Doyan et al, 2018), a mixture of antimony and zinc (Medhi et al, 2019), a mixture of aluminum and fluorine (Susilawati et al, 2020), and a mixture of aluminum and indium (Munandar et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Tin Oxide Thin Layer by Doping Aluminum, Fluorine, and Indium Using Sol-Gel Spin Coating Technique

Muliyadi

2020

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The synthesis of tin oxide thin films with doping aluminum, fluorine, and indium (SnO2: Al + F + In) by sol-gel spin coating technique has been successfully carried out. This synthesis aims to determine the quality of the thin film formed by adding doping aluminum, fluorine, and indium. The basic material used is SnCl2.2H2O, while the doping material used is AlCl3, NH4F, and InCl3.4H2O. The comparison of the basic ingredients and doping mixture of aluminum, fluorine and indium (SnO2: Al+F +In) used were 100: 0%, 95: 5%, 90: 10%, 85: 15%, 80: 20% and 75: 25%. The synthesis uses a glass substrate with size (10 x 10 x 3) mm. Coating synthesis includes substrate preparation, sol-gel making, film making, and sample heating. The layers that are made consist of 1 to 4 layers. The results showed that the layer formed had a high degree of transparency along with the increasing concentration of the doping material percentage. The higher the doping concentrations of aluminum, fluorine, and indium, the higher the transparency of the resulting layer. Besides, the greater the number of layers, the lower the transparency level of the layers