Synthesis, structure and properties of the layered CuxTiS2 compounds

Titov, A. A.; Shkvarina, E. G.; Меренцов, А. И.; Doroshek, A.A.; Shkvarin, A. S.; Zhukov, Yu. M.; Рыбкин, А. Г.; Pryanichnikov, S. V.; Упоров, С. А.

doi:10.1016/j.jallcom.2018.03.376

Cited by 7 publications

(5 citation statements)

References 41 publications

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“…It should be noted that Wagner used this approach for semiconductor compounds study, where a strong change of μ e is achieved due to the low density of states near the stoichiometric composition. In our case, the materials under study are highly degenerate semiconductors with a high density of states near the Fermi level. , Nevertheless, in this case, the contribution of μ i is much smaller than the μ e one.…”

Section: Discussionmentioning

confidence: 79%

“…In our case, the materials under study are highly degenerate semiconductors with a high density of states near the Fermi level. 21,24 Nevertheless, in this case, the contribution of μ i is much smaller than the μ e one.…”

Section: ■ Conclusionmentioning

confidence: 86%

“…TiS 2 powder synthesized from elements (like TiSe 2 ) and special purity grade copper (99.99%) were used to synthesize samples of variable composition Cu x TiS 2 (x = 0.05−1.0) (Ural Chemical Products Plant). Synthesis is carried out at 70 °C in sealed pyrex ampules at 10 −5 Torr within 2−4 days, similar to that described in ref 21.…”

Section: ■ Experimentsmentioning

confidence: 99%

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Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

et al. 2021

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The work is devoted to the study of the possibility of determining the critical points of phase diagrams by measuring the EMF of electrochemical cells relative to a metal that is not part of the test substance. The measurement results of the concentration dependences of the EMF for the Cu x TiS 2 system in the electrochemical cells Na|Na + |Cu x TiS 2 and Cu|Cu + |Cu x TiS 2 in the concentration range 0 < x < 0.7 are compared. It was determined that the chemical potential of the ion is independent of x in a satisfactory approximation. The EMF difference in the given cells is close to the standard electrode potentials difference for respective metals. It is concluded that the dependences E(x) for both types of cells are similar and correlated. Therefore, one can choose any convenient metal for measurements of this kind. Using the example of measuring EMF in electrochemical cells for the Fe x TiSe 2 system concerning sodium and lithium, we showed that the elastic contribution to free energy is constant over the entire concentration range 0 < x < 0.5.

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Section: Discussionmentioning

confidence: 79%

Section: ■ Conclusionmentioning

confidence: 86%

Section: ■ Experimentsmentioning

confidence: 99%

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Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

et al. 2021

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“…These diffuse features were attributed to incomplete 2D ordering (Short Range Order SRO or nano-sized domains) of titanium atoms in the partly occupied layers of the structure. Some metal transition (M) as Fe, Co and Ni, have been successfully inserted into the gap of TiS 2 and show unusual physical properties compared with non-doped/intercalated TiS 2 (see [25][26][27] and references therein).…”

Section: Introductionmentioning

confidence: 99%

First germanium doped titanium disulfide polytypes: Crystal structure and metal–metal interactions

Hammoudi

Gómez-Herrero

Kars

et al. 2019

Comptes Rendus. Chimie

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“…Therefore, the impurity states formed by intercalated atoms are believed to be well distinguishable in this case. Copper was chosen as the atom-intercalant, since in the intercalation compounds based on TiCh 2 copper atoms can occupy sites that are octahedrally and tetrahedrally coordinated by chalcogen in the interlayer space. , Figure shows a fragment of the Cu x ZrSe 2 crystal structure, in which the octahedral and tetrahedral sites are available for the intercalation. Differences in the chemical bonding of copper in these sites are likely to be expected.…”

Section: Introductionmentioning

confidence: 99%

Band Gap Width Control by Cu Intercalation Into ZrSe₂

et al. 2018

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The Cu x ZrSe 2 intercalation single crystals have been synthesized and studied in a concentration range of x = 0−0.3, in which the semiconductor-metal transition was observed. The evolution of the electronic structure of Cu x ZrSe 2 as a function of the copper content has been studied experimentally using the XPS and XAS methods. The obtained results indicate the gradual shift of the Fermi level with increasing copper content, which does not allow the metal−insulator transition to be associated with charge transfer to the conduction band. This transition is associated with the formation of the covalent bond between copper and the nearest selenium atoms and of the p−d hybridized states inside the Zr 4d/Se 4p band gap. Firstprinciple calculations were performed in order to obtain a theoretical description of the density of states near the Fermi level and confirm this conclusion.

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Synthesis, structure and properties of the layered CuxTiS2 compounds

Cited by 7 publications

References 41 publications

Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

First germanium doped titanium disulfide polytypes: Crystal structure and metal–metal interactions

Band Gap Width Control by Cu Intercalation Into ZrSe₂

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Synthesis, structure and properties of the layered CuxTiS2 compounds

Cited by 7 publications

References 41 publications

Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

Determination of the Critical Points for Intercalating Systems by the EMF Method Concerning Foreign Metal

First germanium doped titanium disulfide polytypes: Crystal structure and metal–metal interactions

Band Gap Width Control by Cu Intercalation Into ZrSe2

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Product

Resources

About

Band Gap Width Control by Cu Intercalation Into ZrSe₂