An experimental study of the electronic structure of VTiSe system in a wide range of vanadium concentrations (x = 0.06-0.9) using x-ray photoelectron spectroscopy and resonant photoelectron spectroscopy has been performed. The partial charge transfer from the VSe to TiSe structural fragments is experimentally observed, and the most part of the charge is localized on the vanadium atoms in the VSe structural fragments.

The probability of charge transfer in layered titanium diselenide between monolayers containing Cr, Mn, and Cu with different concentrations and host lattice TiSe 2 is estimated according to the resonant photoemission data. For this purpose, the Raman-Auger contributions and narrow bands just below the Fermi energy were separated in the valence band spectra. These contributions provide the information about charge transfer. It is shown that the localization of the 3d electrons is typical for Cr and Cu atoms and strongly depends on theirs concentration. In Mn x TiSe 2 , Mn 3d electrons are delocalized and the probability of the charge transfer is the greatest as compared with other compounds under investigation. V C 2013 AIP Publishing LLC.

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