Tin sulfide quantum dots (SnS 2 QDs) are n-type wide band gap semiconductor. They exhibit high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have found many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts and solar cells. However, the existing preparation methods for SnS 2 QDs were complicated and they required high temperature and high pressure environment, hence they were unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS 2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green and low-cost. In this work, the structure, morphology, optical, electrical and photoelectric properties of SnS 2 QDs were studied. The synthesized SnS 2 QDs were homogeneous in size and exhibited good photoelectric performance. A photoelectric detector based on the SnS 2 QDs was fabricated and its J-V and C-V characteristics were also studied. The detector responded under λ=365 nm light irradiation and reverse bias voltage. Its detectivity stabilized at approximately 10 11 Jones at room temperature. These results showed the possible use of SnS 2 QDs in photodetectors.