SnS ₂ quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector

Abstract

Tin sulfide quantum dots (SnS 2 QDs) are n-type wide band gap semiconductor. They exhibit high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have found many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts and solar cells. However, the existing preparation methods for SnS 2 QDs were complicated and they required high temperature and high pressure environment, hence they were unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS 2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green and low-cost. In this work, the structure, morphology, optical, electrical and photoelectric properties of SnS 2 QDs were studied. The synthesized SnS 2 QDs were homogeneous in size and exhibited good photoelectric performance. A photoelectric detector based on the SnS 2 QDs was fabricated and its J-V and C-V characteristics were also studied. The detector responded under λ=365 nm light irradiation and reverse bias voltage. Its detectivity stabilized at approximately 10 11 Jones at room temperature. These results showed the possible use of SnS 2 QDs in photodetectors.

Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector

“…Recently, n-type SnS 2 -QDs attracted significant attention due to their earth abundance and nontoxic nature, excellent optoelectronic properties, along with a large band gap of ∼3.3 eV and strong UV light absorption. 34 ance broadband photodetector for next-generation optoelectronic applications.…”

“…This implies increased excitation energy and material energy gap; thus, QDs exhibit a high band gap. Recently, n-type SnS 2 -QDs attracted significant attention due to their earth abundance and nontoxic nature, excellent optoelectronic properties, along with a large band gap of ∼3.3 eV and strong UV light absorption . Recently, Li et al fabricated a UV light (λ = 365 nm) photodetector based on SnS 2 -QDs using cost-effective fabrication methods .…”

A water destructible SnS2QD/PVA film based transient multifunctional sensor and machine learning assisted stimulus identification for non-invasive personal care diagnostics

“…The calculated bandgap is in agreement with the reported literature for SnS 2 QDs. 31,32 The increase in the bandgap when compared to the bulk or 2D counterpart is due to the quantum confinement effect wherein as the size decreases the bandgap increases. 33 SnS 2 QDs at an excitation wavelength of 360 nm showed a strong blue fluorescence with an intense peak at B430 nm and a red shift was observed in the emission peak of SnS 2 QDs as the excitation wavelength increases from 345 nm to 390 nm as shown in Fig.…”

“…3e, wherein the characteristic peaks corresponding to Sn 3d 5/2 and Sn 3d 3/2 were observed at 486.6 eV and 495.2 eV and the difference of B8.4 eV between these two peaks clearly shows the +4 oxidation state of Sn in SnS 2 QDs. 36,37 Fig. 3f shows the high-resolution spectra of S 2p wherein two peaks at 162.9 eV and 161.6 eV signify the presence of S 2p 1/2 and S 2p 3/2 which correspond to the 2-oxidation state of S in SnS 2 QDs.…”

Biosensors Based on Advanced Sulfur-Containing Nanomaterials

“…Sulfide quantum dots commonly included central sulfide nanodots, especially metal sulfide, and surface functional groups. Much research efforts have been devoted to synthesize sulfide quantum dots, such as ZnS, CdS, PbS, Ag 2 S, SnS 2 , In 2 S 3 and AgInZnS quantum dots [ 87 , 88 , 89 , 90 , 91 , 92 ].…”