Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics

Abstract

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Foldable and Disposable Memory on Paper

“…Furthermore, an all-dry polymerization process at room temperature allows thin film deposition on nearly all substrates, compared to previous reports depending on solution processing38394041. iCVD-grown polymer-based functional electronic devices have already been reported42. The all dry approach used here is a key advantage for ease of manufacturing based on paper electronics.…”

Direct Observation of a Carbon Filament in Water-Resistant Organic Memory

“…8,9,14 Due to the high chemical purity and nanoscale thickness controllability of the iCVD process, the iCVD-grown polymer film can be used as an insulating layer for versatile electronic devices. 15 Here, we chose poly(ethylene glycol dimethacrylate) (pEGDMA), with a highly cross-linked structure, which confirms that the polymer has proper band structure as an insulator (Supporting Information). 16 The i-RRAM showed robust flexibility and stable operation, even under water, which originates from the high water stability of the pEGDMA layer.…”

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

“…These challenges may be alleviated if molecular crystals are processed into large-area, highly crystalline monolayers. Such 2D form factor will also bring about new applications such as nanoporous membranes and insulating dielectrics [12,13].Several recent breakthroughs in various types of 2D organic materials such as polymers [14,15], oligomers [16] and covalent organic frameworks [17] have already shown great promises along this direction. However, one of the most fundamental questions regarding the nature of charge transport at the 2D limit has not been addressed.…”