Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resistive switching layer and inkjet printing of the electrode, where iCVD based on all-dry and room temperature process is very suitable for paper electronics. This memory exhibits a low operation voltage of 1.5 V enabling battery operation compared to previous reports and wide memory window. The memory performance is maintained after folding tests, showing high endurance. Furthermore, the quick and complete disposable nature demonstrated here is attractive for security applications. This work provides an effective platform for green, foldable and disposable electronics based on low cost and versatile materials.

Developing a well-defined nanostructure that can provide strong, reproducible, and stable SERS signals is quite important for the practical application of surface-enhanced Raman scattering (SERS) sensors. We report here a novel single nanowire (NW) on graphene (SNOG) structure as an efficient, reproducible, and stable SERS-active platform. Au NWs having a well-defined single-crystal geometry on a monolayer graphene-coated metal film can form a well-defined, continuous nanogap structure that provides extremely reproducible and stable SERS signals. The in-NW reproducibility was verified by 2-dimensional Raman mapping, and the NW-to-NW reproducibility was verified by the cumulative curves of 32 SERS spectra. The simulation also indicated that a highly regular, line-shaped hot spot formed between the Au NW and graphene. Furthermore, SNOG platforms showed improved photostability and long-term oxidation immunity. We anticipate that SNOG platforms will be appropriate for practical biological and chemical sensor applications that demand reproducible, stable, and strong signal production.

A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal-oxide-semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology.