Synthesis of ultrafine β-Ga2O3 nanopowder via hydrothermal approach: A strong UV “excimer-like” emission

Elsayed, Enas; Al-Ghamdi, A.A.; Al-Heniti, S.; Al-Marzouki, F.; El-Tantawy, Farid

doi:10.1016/j.matlet.2010.10.007

Cited by 25 publications

(5 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A large number of studies are devoted to the synthesis of nanopowders and colloidal solutions of nc-Ga 2 O 3 using chemical methods [ 15 , 16 , 17 ]. It has been shown that the emission associated with recombination at structural defects is predominant in their luminescence spectrum [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

et al. 2022

View full text Add to dashboard Cite

A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor–acceptor pairs (DAP) in Ga2O3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-Ga2O3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.

show abstract

Section: Introductionmentioning

confidence: 99%

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

et al. 2022

View full text Add to dashboard Cite

show abstract

“…T he monoclinic phase of gallium oxide (-Ga 2 O 3 ), having a band gap of $4:9 eV, has attracted significant attention due to its thermal stability and high optical transparency in the visible region. [1][2][3] -Ga 2 O 3 has great potential applications in transparent optoelectronic devices and high-temperature gas sensors. [4][5][6] Recently, substantial efforts have been made to synthesize -Ga 2 O 3 in the form of one-dimensional nanowires (NWs) and nanorods efficiently using various fabrication techniques, such as vapor phase transport deposition, 7) laser ablation, 8) and chemical vapor deposition.…”

mentioning

confidence: 99%

Self-Catalytic Growth of β-Ga₂O₃Nanowires Deposited by Radio-Frequency Magnetron Sputtering

Park

Lee

Seo

et al. 2013

Appl. Phys. Express

View full text Add to dashboard Cite

We report the growth behavior of β-Ga2O3 nanowires (NWs) on sapphire (0001) substrates during radio-frequency magnetron sputtering. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of the thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ∼450 °C. The β-Ga2O3 NWs were grown through the self-catalytic vapor–liquid–solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the photoluminescence properties of as-grown and annealed β-Ga2O3 NW samples were investigated.

show abstract

“…Ga 2 O 3 has seven corundum (α-), monoclinic (β-), defective spinel (γ-), orthorhombic (δ-), orthorhombic (ε-), polycrystalline, and amorphous phases. In these different structures, the βphase is the most stable, and other phases will change into βmutually [103,104]. At present, Ga 2 O 3 materials used to prepare solar-blind detectors mainly include β-Ga 2 O 3 crystals, crystal epitaxial films, and nanostructures, among which thin-film devices are widely used because of their convenient preparation [105].…”

Section: Duv Pds Based On Gallium Oxide Materialsmentioning

confidence: 99%

Deep Ultraviolet Photodetector: Materials and Devices

Fang

et al. 2023

Crystals

View full text Add to dashboard Cite

The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers’ attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.

show abstract

Synthesis of ultrafine β-Ga2O3 nanopowder via hydrothermal approach: A strong UV “excimer-like” emission

Cited by 25 publications

References 48 publications

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Self-Catalytic Growth of β-Ga₂O₃Nanowires Deposited by Radio-Frequency Magnetron Sputtering

Deep Ultraviolet Photodetector: Materials and Devices

Contact Info

Product

Resources

About

Synthesis of ultrafine β-Ga2O3 nanopowder via hydrothermal approach: A strong UV “excimer-like” emission

Cited by 25 publications

References 48 publications

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Self-Catalytic Growth of β-Ga2O3Nanowires Deposited by Radio-Frequency Magnetron Sputtering

Deep Ultraviolet Photodetector: Materials and Devices

Contact Info

Product

Resources

About

Self-Catalytic Growth of β-Ga₂O₃Nanowires Deposited by Radio-Frequency Magnetron Sputtering