Synthesis of tungsten carbide thin films by reactive pulsed laser deposition

Chiţică, N.; György, E.; Lita, Adriana E.; Gheorghe, Marin; Mihăilescu, I. N.; Pantelică, D.; Petrașcu, M.; Hatziapostolou, A.; Grivas, C.; Broll, N.; Cornet, Alain; Mirica, Codruta; Andrei, A. H.

doi:10.1016/s0040-6090(97)00001-1

Cited by 23 publications

(6 citation statements)

References 14 publications

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“…18 Different types of tungsten carbide materials in the form of single crystal, carbide-modified single crystal, and polycrystalline thin films have been synthesized, and their reactivity with various molecules has been studied. 19 Preparation of polycrystalline tungsten carbide thin films using plasma reactive deposition 20 and pulsed laser deposition 21 has been previously reported in the literatures. However, single-phase films of either WC or W 2 C cannot be obtained from these methods.…”

Section: ■ Introductionmentioning

confidence: 99%

Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament

et al. 2013

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A method of forming crystalline tungsten carbides was reported by exposing the heated tungsten filament to 1,1,3,3-tetramethyl-1,3-disilacyclobutane (TMDSCB) in a hot-wire chemical vapor deposition process. Methyl radicals produced from the decomposition of TMDSCB on the filament serve as the carbon source. The formation of tungsten carbides was investigated by X-ray diffraction, cross-sectional scanning electron microscopy, and in-situ filament resistance measurements. A pure W2C phase was formed at a high temperature of 2400 °C after 1–2 h exposure time with a growth rate of 4.4 μm min–1. The growth of the W2C layer is found to be a diffusion-controlled process. Our study at longer deposition time of 3–4 h shows that once the metal filament is fully carburized to form W2C, the carbon-rich WC phase starts to form on the outside layer upon further exposure to TMDSCB. A WC layer with no contamination from the W2C phase was found to be formed at 2400 °C and 4 h deposition time.

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Section: ■ Introductionmentioning

confidence: 99%

Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament

et al. 2013

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“…[3][4][5][6][7][8][9][10][11] The versatility of PVD methods has enabled the development of various functional thin films such as tungsten carbide, silicon carbide, chromium carbide, titanium carbide, cubic boron nitride, carbon nitride, and silicon nitride films. [12][13][14][15][16][17][18] We have also studied thin-film preparation using PLD, and deposited high-quality functional thin films. [19][20][21][22][23][24][25][26][27] In PVD, high-density bulk targets are generally used.…”

Section: Introductionmentioning

confidence: 99%

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

Kawasaki

Ohshima

Yagyu

et al. 2017

Jpn. J. Appl. Phys.

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Tris(8-hydroxyquinolinato)aluminum (Alq 3 ) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq 3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

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“…[7][8][9] The versatility of the PLD method has enabled the development of various functional thin films such as tungsten carbide, silicon carbide, chromium carbide, titanium carbide, cubic boron nitride, carbon nitride, and silicon nitride. [10][11][12][13][14][15][16][17][18] We have also been studying thin-film preparation by the PLD method, and have deposited high-quality functional thin films. [19][20][21][22][23][24] PLD involves the use of a high-power pulsed laser beam focused inside a vacuum chamber.…”

Section: Introductionmentioning

confidence: 99%

Preparation of mixed bismuth and iron thin films by pulsed laser deposition using powder targets

Kawasaki¹,

Ohshima²,

Yagyu³

et al. 2015

Jpn. J. Appl. Phys.

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Bismuth iron garnet (Bi3Fe5O12) thin films, for use in magnetic optics, were prepared by a pulsed laser deposition method using Bi and Fe mixed powder targets in oxygen gas. The deposition rate of the film strongly depended on the target mixture. The X-ray diffraction and X-ray photoelectron spectroscopy results suggest that the prepared films were not Bi3Fe5O12 but Bi-rich films, because of the lower melting temperature of Bi (544 K) compared with that of Fe (1811 K).

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Synthesis of tungsten carbide thin films by reactive pulsed laser deposition

Cited by 23 publications

References 14 publications

Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament

Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

Preparation of mixed bismuth and iron thin films by pulsed laser deposition using powder targets

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