2020
DOI: 10.1016/j.ceramint.2019.10.235
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Synthesis of Ti2AlC & Ti3AlC2 MAX phases by Arc-PVD using Ti–Al target in C2H2/Ar gas mixture and subsequent annealing

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Cited by 28 publications
(10 citation statements)
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“…For Ti 3 C 2 MXene, Raman peaks were positioned at 151, 251, 404, and 615 cm −1 , ascribed to ω 1 , ω 2 , ω 3 , and ω 4 Raman-active modes, respectively. 37 The peak positions are slightly shifted in comparison to those in other studies due to the different preparation approach with in situ growth of TiO 2 nanoparticles. The active modes at 151 and 615 cm −1 may reflect the presence of TiO 2 .…”
Section: Resultsmentioning
confidence: 63%
See 1 more Smart Citation
“…For Ti 3 C 2 MXene, Raman peaks were positioned at 151, 251, 404, and 615 cm −1 , ascribed to ω 1 , ω 2 , ω 3 , and ω 4 Raman-active modes, respectively. 37 The peak positions are slightly shifted in comparison to those in other studies due to the different preparation approach with in situ growth of TiO 2 nanoparticles. The active modes at 151 and 615 cm −1 may reflect the presence of TiO 2 .…”
Section: Resultsmentioning
confidence: 63%
“…The peaks appearing at 1350 and 1580 cm –1 can be ascribed to the D and G bands of graphene, respectively. For Ti 3 C 2 MXene, Raman peaks were positioned at 151, 251, 404, and 615 cm –1 , ascribed to ω 1 , ω 2 , ω 3 , and ω 4 Raman-active modes, respectively . The peak positions are slightly shifted in comparison to those in other studies due to the different preparation approach with in situ growth of TiO 2 nanoparticles.…”
Section: Resultsmentioning
confidence: 65%
“…They found that the crystalline Ti 3 SiC 2 MAX film formed at 700 °C using individual titanium, silicon, and C60 as sputtering targets, whereas no Ti 3 SiC 2 phase was formed with Ti 3 SiC 2 as the target at temperatures below 900 °C. [ 69 ] Mahmoudi et al [ 70 ] prepared MAX thin films in the Ti–Al–C system using two Ti–Al alloy targets with Ti:Al atomic ratios of 1:1 and 1:2, respectively. They found that Ti 2 AlC MAX phase formed when 1Ti–2Al target was used and the annealing temperature was 800 °C.…”
Section: Synthesis Methods Of Maxmentioning
confidence: 99%
“…One is Ti 3 SiC 2 compound target, and the other is individual titanium, silicon, and C60 targets. They found that the crystalline Ti 3 SiC 2 MAX film formed at 700 C using individual titanium, silicon, and C60 as sputtering targets, whereas no Ti 3 SiC 2 phase was formed with Ti 3 SiC 2 as the target at temperatures below 900 C. [69] Mahmoudi et al [70] prepared MAX thin films in the Ti-Al-C system using two Ti-Al alloy targets with Ti: Reprinted with permission. [63] Copyright 2019, Springer Nature.…”
Section: Pvdmentioning
confidence: 99%
“…Plus, it is feasible to deposit heterogeneous multilayer coatings with excellent adhesion to the substrate, providing a dense film possessing a high deposition rate. [28][29][30] Although so far TiN has been intensively studied as a coating material, the other binary nitrides and carbides of the transition metals have also attracted considerable interest. Among the developed new materials, ternary nitrides and carbides mostly titanium-based are being increasingly studied and to some extent technically used.…”
Section: Introductionmentioning
confidence: 99%