“…In addition, because there is only a thin layer of Ni 2 P formed on the surface of NF, thus Ni 2 P NL/NF is prone to be oxidized when exposed to air. In contrast to Ni 2 P NL/NF, for Ni 2 P NWAs/NF-15-160, the intensity of the Ni 2p 3/2 (Ni 2p 1/2 ) peak at 852.9 eV (870.2 eV) for Ni–P species substantially enhanced due to the effective phosphorization of the preformed Ni oxide/hydroxide layer, 31,32 resulting in the formation of high-density Ni 2 P NWAs. The content of P on NF for Ni 2 P NWAs/NF-15-160 is determined to be as high as 3.43 wt% by inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis, corresponding to a loading amount of 16.5% for the Ni 2 P NWAs grown on a NF substrate.…”