Synthesis of SiC Nano-powder from TEOS by RF Induction Thermal Plasma

Abstract

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica (SiO 2 ) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

Effect of the C/Si Molar Ratio on the Characteristics of β-SiC Powders Synthesized from TEOS and Phenol Resin

“…또한, 합성된 SiC는 넓은 범위의 입도분포를 가지기 때문에 분쇄 및 분급이 필요하다는 단점이 있다. 그렇기 때문에 높은 순도를 가지며 균일한 입도 분포를 갖는 SiC 분말을 제조하기 위한 방법으로 자전고온 합성 법(self-propagation high-temperature synthesis, SHS), 8,9) 열플라즈마 합성법, 10) 직접탄화법, 11,12) 폴리실록센과 탄소 전구체를 사용하는 열탄소환원법 )이 관찰되었다.…”