Synthesis of nanowires and nanoparticles of cubic aluminium nitride

Abstract

Nanostructures of cubic aluminium nitride were synthesized by DC arc-plasma-induced melting of aluminium in a nitrogen–argon ambient. The material flux ejected from the molten aluminium surface was found to react with nitrogen under highly non-equilibrium conditions and subsequently condense on a water-cooled surface to yield a mixture of nanowires and nanoparticles of crystalline cubic aluminium nitride. Both x-ray diffraction and electron diffraction measurements revealed that the as-synthesized nitrides adopted the cubic phase. Fourier transform infrared spectroscopy was used to understand the bonding configuration. Microstructural features of the synthesized material were best studied by transmission electron microscopy. From these analyses cubic aluminium nitride was found to be the dominating phase for both nanowires and nanoparticles synthesized at low currents. The typical particle size distribution was found to range over 15–80 nm, whereas the wires varied from 30 to 100 nm in diameter and 500 to 700 nm in length, depending upon the process parameters such as arc current and the nitrogen pressure. The reaction products inside the plasma zone were also obtained theoretically by minimization of free energy and the favourable zone temperature necessary for the formation of aluminium nitride was found to be K. Results are discussed in view of the highly non-equilibrium conditions that prevail during the arc-plasma synthesis.

Synthesis of Cubic Aluminum Nitride Coating from Al₂O₃ Powder in Reactive Plasma Spray Process

“…Moreover, the broad peak around 3400 cm ¹1 is reportedly assigned to the OH bond and physisorbed or weakly chemisorbed water from the air, which agrees with the previous data. 14,25) Thus, the AlN powders have high specific surface area and reacts with the moisture in the air to form the bayerite Al(OH) 3 , as reported before. 26) Furthermore, the sprayed particles were collected in water.…”

“…These results agree with the reported data about AlN bond. 14,25) The AlO spectrum was observed at around 486, 356, 630 and 763 cm…”

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

“…One of the most notable advantages of this technique is that it enables the fabrication of nanostructures with high crystal quality due to the high growth temperature and temperature gradient used. Recently, Balasubramanian et al [34] reported the successful synthesis of 1D AlN nanowires by the DC arc plasma method. First, Al was melted in a N 2 -Ar ambient through arc plasma discharge.…”

“…Various fabrication methods have been employed to synthesize these nanowires and they may be classified into four main classes: (1) template-confined method [16,[31][32][33], (2) direct current (DC) arc discharge method [34][35][36][37][38], (3) catalyst-assisted vapor-liquid-solid (VLS) growth method [39][40][41][42][43][44][45][46], and (4) catalyst-free vapor-solid (VS) growth method [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63]. Although significant progress in the synthesis of AlN nanowires has been achieved lately, some challenges remain and are expected to be overcome in the near future.…”

Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography

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