Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Butt, Faheem K.; Mirza, Misbah; Cao, Chuanbao; Idrees, Faryal; Tahir, Muhammad; Safdar, Muhammad; Ali, Zulfiqar; Tanveer, Muhammad; Aslam, Imran

doi:10.1039/c4ce00267a

Cited by 65 publications

(45 citation statements)

References 30 publications

(7 reference statements)

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“…However, where the precursor travelled further into the hotter region of the furnace, crystalline SnSe was observed. In contrast, we found no evidence for SnSe deposition using precursor (4).…”

Section: Tin Selenide Thin Filmscontrasting

confidence: 96%

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

et al. 2018

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The molecular Sn(iv) complexes, [SnCl{BuS(CH)SBu}] (2), [SnCl(BuS)] (3) and [SnCl(BuSe)] (4) have been prepared in good yield from reaction of SnCl with the appropriate chalcogenoether ligand in anhydrous hexane and, together with the known [SnCl{BuSe(CH)SeBu}] (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. In contrast, (3) gave a mixture of phases, SnS, SnS and SnS and (4) gave SnSe only. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. Van der Pauw measurements on the SnS, SnS and SnSe films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω cm, respectively.

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Section: Tin Selenide Thin Filmscontrasting

confidence: 96%

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

et al. 2018

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“…Figure 2b shows the XRD patterns of the SnSe powders before (pristine SnSe) and after the reaction (Se/SnSe). Pristine SnSe powder shows diffraction patterns typical of the orthorhombic Pnma crystal structure (JCPDS #48-1224) with no additional XRD peak 21 – 23 , indicating the existence of pure phase of SnSe. In contrast, the sample collected after the reaction exhibits a second pattern of XRD peaks in addition to the primary diffraction pattern of Pnma crystal, originating from the pristine Se (shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Hydrothermal transformation of SnSe crystal to Se nanorods in oxalic acid solution and the outstanding thermoelectric power factor of Se/SnSe composite

Park

Kim

2017

Sci Rep

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The present work demonstrates the synthesis of one-dimensional (1D) Se nanorods with ~50 nm diameter by hydrothermal transformation of SnSe crystals in oxalic acid solution and suggests the reaction mechanism for this chemical transformation. SnSe particles react with oxalic acid to generate numerous Se nuclei, which crystallize into Se nanorods due to the intrinsic character of the 1D growth of Se. The resulting Se/SnSe composite exhibits outstanding thermoelectric power factor without the aid of any rare dopants, which is higher than both undoped polycrystalline SnSe and SnSe doped with Pb and Cu.

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“…Tin selenide is a IV-VI p-type semiconductor, and the indirect band gap of 0.9 eV and direct band gap of 1.3 eV (Lefebvre et al, 1998) make this material suitable for many photovoltaic and optoelectronic applications (Zhao et al, 2015;Butt et al, 2014;Liu et al, 2015). In addition, crystalline tin selenide has attracted considerable attention due to its record high thermoelectric figure of merit ZT of 2.6 AE 0.3 (Zhao et al, 2014;Sassi et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

Crystal structure and phase transition of thermoelectric SnSe

Sist

Zhang

Iversen

2016

Acta Crystallogr Sect B

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Tin selenide-based functional materials are extensively studied in the field of optoelectronic, photovoltaic and thermoelectric devices. Specifically, SnSe has been reported to have an ultrahigh thermoelectric figure of merit of 2.6 ± 0.3 in the high-temperature phase. Here we report the evolution of lattice constants, fractional coordinates, site occupancy factors and atomic displacement factors with temperature by means of high-resolution synchrotron powder X-ray diffraction measured from 100 to 855 K. The structure is shown to be cation defective with a Sn content of 0.982 (4). The anisotropy of the thermal parameters of Sn becomes more pronounced approaching the high-temperature phase transition (∼ 810 K). Anharmonic Gram-Charlier parameters have been refined, but data from single-crystal diffraction appear to be needed to firmly quantify anharmonic features. Based on modelling of the atomic displacement parameters the Debye temperature is found to be 175 (4) K. Conflicting reports concerning the different coordinate system settings in the low-temperature and high-temperature phases are discussed. It is also shown that the high-temperature Cmcm phase is not pseudo-tetragonal as commonly assumed.

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Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Cited by 65 publications

References 30 publications

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

Hydrothermal transformation of SnSe crystal to Se nanorods in oxalic acid solution and the outstanding thermoelectric power factor of Se/SnSe composite

Crystal structure and phase transition of thermoelectric SnSe

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Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Cited by 65 publications

References 30 publications

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

Hydrothermal transformation of SnSe crystal to Se nanorods in oxalic acid solution and the outstanding thermoelectric power factor of Se/SnSe composite

Crystal structure and phase transition of thermoelectric SnSe

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Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films