Synthesis of Large-Scale Transition Metal Dichalcogenides for Their Commercialization

Abstract

Transition metal dichalcogenides (TMDC) have been identified as excellent platforms for developing the next-generation commercial flexible logic devices and sensors, owing to their outstanding mechanical, optical, and electrical properties. The TMDCs can be used to produce novel form-factors for wearable electronic devices. Typically, synthesis of large-scale TMDC thin film have been achieved by complexity vacuum-based approach. Therefore, it is essential to develop a simple and effective method to boost-up mass production of TMDC thin films on a large scale upon arbitrary substrates. In this regard, the solution-based TMDC synthesis method is advantageous because it proposes a simplification of the fabrication processes and an easy scaling-up of the material with a non-vacuum system. In this review, we summarize the evolution of the solution-based thin-film preparation and synthesis of the TMDCs; subsequently, we discuss the merits and drawbacks of the recently developed methods to form TMDC thin films directly from the deposited precursor. Finally, we discuss the practical applications of the TMDC thin films, which demonstrate the feasibility of their commercialized applications in electronic devices and sensors.

Selective CW Laser Synthesis of MoS2 and Mixture of MoS2 and MoO2 from (NH4)2MoS4 Film

“…A uniform micropattern can be obtained using laser radiation in a high-quality film that is needed for electrical and photonic device applications. The high-quality ATM film can be achieved by mixing ATM with a polymer PEI [23,24]. For the device's capability, an ink printing method [50] can be used.…”

“…As seen in Figure 1a, two peaks at 376 and 402 cm −1 , corresponding to E 2g and A 1g modes of MoS 2 , appear when the laser power goes from 3.5 to 4 mW. The difference in peak position is 26 cm −1 , indicating many layers of layered structure are formed in MoS 2 [23]. Although the laser was excited at different regions as shown in the inset, the laser intensity threshold behavior was confirmed using a new sample.…”

“…Although (NH 4 ) 2 MoS 4 can be dissolved in DI water, the formed film quality is poor. Through the mixing of (NH 4 ) 2 MoS 4 precursor with a polymer matrix polyethyleneimine (PEI), a high quality (NH 4 ) 2 MoS 4 can be prepared, leading to MoS 2 on a 6-inch SiO 2 /Si wafer [23,24]. Very recently, a laser synthesis of MoS 2 and WS 2 through the pulsed laser (λ = 1.06 µm, pulse duration ~100 ps)-directed thermolysis in ambient conditions has achieved wafer-scale samples and devices [2,23,25].…”

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

“…[4][5][6][7] To address these issues, extensive research on 2D materials such as transition metal dichalcogenides (TMDs) is being actively pursued. [8,9] TMDs have a band gap similar to that of conventional semiconductor materials such as silicon [10] and their thickness is comparable to that of atomic layers, making them suitable for applications in thin devices and streamlined processing. [10] Moreover, the band gap of TMDs can be controlled by manipulating the number of layers.…”

Uniformity and Thickness Control of MoS2 During Thermolysis

“…Nevertheless, uniformity becomes a limiting factor as the growth area increases. Therefore, an innovative solution-based thermolysis synthesis method was developed using a Mo precursor [40]. This approach facilitates precise control of MoS 2 thickness through the manipulation of precursor [(NH 4 ) 2 MoS 4 , (NH 4 ) 6 Mo 7 O 24 •4H 2 O, Na 2 MoO 4 ] concentration.…”