“…REVIEW www.advmat.de Also by the same group, La 0.6 Sr 0.4 FeO 3 /La 0.6 Sr 0.4 CoO 3 heterolayers were grown by PLD in order to explore interfacial effects on the mixed conductivities. [98] With the confirmed epitaxial interfaces between the two oxide layers, the electrical conductivity of the heterolayer was found to be slightly higher than the average value of the two individual layers. As one refers more to the electronic conductivity, this system is not directly relevant for our theme, even though interesting with respect to solid state ionic devices.…”
In the context of revealing interfacial effects on ion conduction, thin films are extremely worthwhile due to defined geometry. Of particular interest are heterostructures as they offer symmetric boundary conditions and a high density of hetero‐interfaces. The recent progress in this field is reviewed. Materials classes under concern include halides and oxides, and refer to various degrees of disorder and different mobilities. Even though in its infancy, the field of ionic heterostructures is already characterized by a variety of results of fundamental importance and of technological relevance.
“…REVIEW www.advmat.de Also by the same group, La 0.6 Sr 0.4 FeO 3 /La 0.6 Sr 0.4 CoO 3 heterolayers were grown by PLD in order to explore interfacial effects on the mixed conductivities. [98] With the confirmed epitaxial interfaces between the two oxide layers, the electrical conductivity of the heterolayer was found to be slightly higher than the average value of the two individual layers. As one refers more to the electronic conductivity, this system is not directly relevant for our theme, even though interesting with respect to solid state ionic devices.…”
In the context of revealing interfacial effects on ion conduction, thin films are extremely worthwhile due to defined geometry. Of particular interest are heterostructures as they offer symmetric boundary conditions and a high density of hetero‐interfaces. The recent progress in this field is reviewed. Materials classes under concern include halides and oxides, and refer to various degrees of disorder and different mobilities. Even though in its infancy, the field of ionic heterostructures is already characterized by a variety of results of fundamental importance and of technological relevance.
“…Satellite peaks of CGO and LSC are visible at higher and lower angles with respect to the main reflection peaks, indicating high-quality of the heterostructures. 16,18,48,49 The values of full width at half maximum (FWHM) are between 0.5°<2 < 1.3° (Figure 1b), suggesting a high degree of crystallinity and low structural and microstructural mosaic disorder in the films. Especially, the crystallinity of the films improves by decreasing N and increasing the thickness This effect is likely due to the theoretical mismatch between CGO and LSC is 0.92%.…”
Section: Pristine Structural and Microstructural Featuresmentioning
confidence: 99%
“…in multilayer thin films stacked at the nanoscale, electronic and ionic properties at interfaces can also be mixed and enhanced by varying layer characteristics and new properties in such heterostructures come from lattice strain and interface mobility effects, resulting even in enhanced chemical stability. [16][17][18][19][20] MeOs such as oxygen defective cerium oxide (ceria) fluorite, CeO 2- , and cobalt-based perovskites are a good example of such tunability. Ceria is a MIEC under reducing atmospheres, where formation of oxygen vacancies are compensated by the formation of polaron defects due to Ce 4+ /Ce 3+ valence changes.…”
“…Similar behavior has been reported in La1-xSrxFeO3 (LSFO), which is expected for electrode material of Solid oxide fuel cell (SOFC) at intermediate temperature (IMT) region (2,3). In the research area of electrochemistry, the LSFO thin film is well known as electronion mixed conductor (4,5). Although the LSFO is promising material for activation at the interface reaction between electrolyte and electrode (6), the chemical stability has not been proved thus far.…”
Nd0.6Sr0.4FeO3 (NSFO) thin films with various thicknesses have been deposited on Al2O3 (0001) substrates by RF magnetron sputtering. The lattice constant decreases with increasing film thickness. The electrical conductivity is higher than that of the bulk crystal. The conductivity at 500˚C does not depend on the oxygen gas partial pressure. The value of band gap corresponds to the activation energy calculated from Arrhenius plots. These results indicate that NSFO thin film has the high electron conduction in addition to oxygen-ion conduction at 500˚C.
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