Electron-Ion Mixed Conduction of Nd_0.6Sr_0.4FeO₃Cathode Electrode Thin Film for Solid Oxide Fuel Cell

Abstract

Nd0.6Sr0.4FeO3 (NSFO) thin films with various thicknesses have been deposited on Al2O3 (0001) substrates by RF magnetron sputtering. The lattice constant decreases with increasing film thickness. The electrical conductivity is higher than that of the bulk crystal. The conductivity at 500˚C does not depend on the oxygen gas partial pressure. The value of band gap corresponds to the activation energy calculated from Arrhenius plots. These results indicate that NSFO thin film has the high electron conduction in addition to oxygen-ion conduction at 500˚C.

Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

“…[1][2][3][4][5][6][7] Recently, reservoir computing, which can process time-series data with a small learning cost, has been attracting attention, and attempts to process time-series data with high accuracy using nonlinear responses and short-term memory of physical devices have been vigorously pursued. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] Among these, an all-solid-state ion-gating device, which is one of the ionic devices, [27][28][29][30][31][32][33][34][35][36] can control the physical properties (not only electrical properties but also magnetic and optical properties) of functional materials by transporting ions, [37][38][39][40][41][42][43][44][45][46][47]…”