Synthesis of InSb and InxGa1?xSb thin films from electrodeposited elemental layers

Mengoli, G.; Musiani, Marco; Paolucci, Francesco; Gazzano, Massimo

doi:10.1007/bf01042452

Cited by 23 publications

(8 citation statements)

References 31 publications

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“…Depositions of InAs 96) and InSb 107,108) performed by sequential electrodeposition have been reported. The electrodeposition of indium was performed onto electrodeposited arsenic or antimony layers, because the loss of deposited group V element was severe during the annealing treatment when they constituted the outer layer.…”

Section: Binary Alloysmentioning

confidence: 99%

“…For the synthesis of InSb thin films, antimony was deposited from a solution of SbCl 3 , H 2 SO 4 , and HCl at −0.25 V vs. SCE for a time sufficiently long to obtain the desired film thickness. 107,108) The indium was deposited on an Sb film from a chloride bath containing InCl 3 with a pH ranging from 1.5 to 2.0 at −0.85 V vs. SCE.…”

Section: Binary Alloysmentioning

confidence: 99%

“…Mengoli et al 107) prepared In x Ga 1−x Sb samples via multi-step electrodeposition and annealing at 200 o C or 400 o C. The results showed that only In x Ga 1-x Sb samples with x ≥ 0.91 formed a single phase, while two phases (In-rich and Ga-rich) were detected for lower x values. They suggested that a compound formation could occur through the diffusion of III group metals into the Sb and a solid-phase reaction.…”

Section: Metal Diffusion During Electrodepositionmentioning

confidence: 99%

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Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

J. Electrochem. Sci. Technol

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Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

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Section: Binary Alloysmentioning

confidence: 99%

Section: Binary Alloysmentioning

confidence: 99%

Section: Metal Diffusion During Electrodepositionmentioning

confidence: 99%

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Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

J. Electrochem. Sci. Technol

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show abstract

“…In most cases, a multi-layered alloy film needs thermal treatment to improve its morphology or physical properties. 96) and InSb 107,108) performed by sequential electrodeposition have been reported. The electrodeposition of indium was performed onto electrodeposited arsenic or antimony layers, because the loss of deposited group V element was severe during the annealing treatment when they constituted the outer layer.…”

Section: Multi-step Depositionmentioning

confidence: 99%

“…Successive layers in a InGaSb sample 107) were deposited in the following order: Sb, In, and Ga. Antimony was deposited from a solution of SbCl 3 , H 2 SO 4 , and HCl, and then, indium was deposited from a bath containing InCl 3 and KCl at −0.85 V vs. SCE, at room temperature under stirring. Finally, gallium was deposited at −2.00 V vs. SCE from a solution of GaCl 3 and KOH at 47 o C. In the deposited InGaSb, the amount of Ga + In (in moles) was equal to that of Sb.…”

Section: Binary Alloys Depositions Of Inasmentioning

confidence: 99%

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

Journal of Electrochemical Science and Technology

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:Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

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