Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.
nergy savings are now a mandatory demand of most aspects of information and communications [1]. Today, scientists are asked to create not only powerful communication systems but systems that consume less energy. This request has a significant impact on the design of new wireless communication systems [2]. It also requires improvement in existing ones.Mobile ad-hoc networks born in the 1970s are a type of wireless network that allows us to exchange data in a very convenient way. Although limited in power and capability, mobile ad-hoc networks have proven themselves as convenient infrastructure-free communication tools. Supporting mobility, allowing better connectivity and performance when moving between different networks, they promise an important contribution to the future evolution of the Internet [3].Recently, cloud computing has been widely recognized by both industry and academia. Advances in cloud computing have made it possible to provide infrastructure, platform, and software as services for users from any computer/device with an Internet connection. Leveraging cloud computing in mobile ad-hoc networks gives birth to rich applications [4]. In particular, for future fifth generation (5G) mobile ad-hoc networks, the study of cloud-assisted service computing can be a hotter topic than ever before.The combination of cloud computing with mobile ad-hoc networks in 5G obviously creates new powerful networks by giving additional advantages, significantly reduced computing, and longer lasting mobility in the network, respectively. These advantages have facilitated the quick growth of richer applications and services, both of which require the removal
Sm3+-doped glass sol was prepared by a sol–gel method and coated on a bare Si substrate and an Al coated Si substrate (Al/Si). The coated glass films were heat treated in a hydrogen atmosphere or air to reduce the Sm3+ to Sm2+ and then the optical properties were examined through a photoluminescence (PL) experiment. While the glass films coated on a bare Si substrate or an Al/Si one were well reduced in hydrogen atmosphere, only the glass films coated on the Al/Si substrate were reduced in air. We thus suggest two possible reducing mechanisms related to hydrogen and the metal aluminium and we found that the metal aluminium coated on a Si substrate plays an important role in the reducing process.
The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing In 3+ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of −0.6~−0.8 V was close to progressive nucleation limited by diffusion. However the nondimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than −0.8 V.
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