Synthesis ofn-way active topology for wide-band RF/microwave applications

Abstract

A novel architecture of n-way active topology for RF/microwave module applications is developed. This architecture is based on the use of active cell composed of a field effect transistor (FET) in cascade with shunt resistor. A theoretic analysis illustrating the S-parameters calculation was established. The expressions of the n-way power divider output gains were demonstrated. A synthesis method of active power-splitter or/and 180 balun in function of the considered FET stage number constituting each outer branch was proposed. A simple active power-splitter was designed using an even number of FET between the input-output branches. In addition, a variable gain active power-splitter was simulated. The FETs are biased at V ds ¼ 6 V and I ds ¼ 25 mA. So, insertion losses above À1.5 dB, return losses better than À15 dB and excellent isolation below À30 dB at all three ports were obtained from 0.5 to 5.5 GHz. Using odd number of FET stage, an active balun was realised. Then, simulations of active balun showing a perfectly constant differential out-phase (180 AE 5 ), insertion losses above À1.5 dB and an excellent isolation below À30 dB for all three ports, from 0.3 to 4.5 GHz were performed.

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