Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

Matsoso, Boitumelo J.; Hao, Wenjun; Li, Yangdi; Vuillet-a-Ciles, Victor; Garnier, Vincent; Steyer, Philippe; Toury, Bérangère; Marichy, Catherine; Journet, Catherine

doi:10.1088/2515-7639/ab854a

Cited by 14 publications

(9 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the surface profile plot, the interplanar distance (d) is found to be ∼0.33 nm, which indicates the (002) plane of the h-BN phase. 20,21 Thus, the coexistence of h-BN and g-C 3 N 4 nanodomains is consistent with the aforementioned XRD results, suggesting the novelty of synthesized B x C y N z nanosheets. Because it is already reported that h-BN is a layered material, 22 the d spacing calculated from the HRTEM image actually represents the interlayer spacing, which should be in the nanometer range although the reported diffraction peak of h-BN is sharp enough.…”

Section: ■ Results and Discussionsupporting

confidence: 85%

Boron Carbonitride Nanosheet/ZnO Nanorod Heterojunctions for White-Light Emission

Pal

Bayan

Goswami

et al. 2021

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

We report for first time the fabrication of boron carbonitride (B x C y N z ) nanosheets with a unique structural backbone comprised of B-doped graphitic carbon nitride (g-C 3 N 4 ) as well as C-doped hexagonal boron nitride (h-BN) and demonstrate their potential applications in light-emitting devices. The existence of these two types of domains in B x C y N z nanosheets bestows a fascinating electronic structure originating from the π, π*, n states of g-C 3 N 4 and the native defect states of h-BN. Like conventional B-doped g-C 3 N 4 , p-type conductivity has been perceived upon the incorporation of C into the h-BN lattice. The ternary nanosheets exhibit unique negative thermal quenching (NTQ) characteristics in photoluminescence emission, making the material stupendous for the fabrication of superior-performance light-emitting diodes using a lower injection current density at room temperature. The fabricated two-dimensional/one-dimensional heterojunction based on B x C y N z nanosheets/ZnO nanorods displays broadband white-light emission with superior intensity at a much lower turn-on voltage of ∼3 V. The fabrication of B x C y N z nanosheets with doped g-C 3 N 4 and h-BN nanodomains and the manifestation of superior light-emission characteristics with unique NTQ attributes can open up the possibility for next-generation light-emitting and display systems with outstanding luminescence stability.

show abstract

Section: ■ Results and Discussionsupporting

confidence: 85%

Boron Carbonitride Nanosheet/ZnO Nanorod Heterojunctions for White-Light Emission

Pal

Bayan

Goswami

et al. 2021

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…Prior to the exfoliation, the substrates were cleaned using acetone for 5 min, isopropyl alcohol for 5 min, followed by 5 min of 30 W oxygen plasma treatment. Two control samples grown at atmospheric pressure have also been used: a APHT (atmospheric pressure, high temperature) sample grown in KSU (Kansas, USA) using Ni/Cr solvent 34 , and a sample grown in LMI (Lyon, France) using PDC (polymer derived ceramics) 35 . Both samples have been exfoliated using adhesive tape on a SiO 2 /Si substrate.…”

Section: Methodsmentioning

confidence: 99%

Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

et al. 2021

View full text Add to dashboard Cite

Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.

show abstract

“…Following pioneering studies [16][17][18], we have recently proposed an alternative synthesis approach conducted under quite soft conditions, involving a polymer derived ceramics (PDC) route and a post-sintering process performed into a pressurecontrolled furnace (PDC/pressure-controlled sintering (PCS)) [19]. With this original coupling, large and transparent hBN single crystals up to millimeter size have been obtained through softer conditions and have led to boron nitride nanosheets (BNNSs) presenting a lateral size up to few hundreds microns after exfoliation.…”

Section: Introductionmentioning

confidence: 99%

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Maestre

Garnier

et al. 2022

2D Mater.

Self Cite

View full text Add to dashboard Cite

In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it a promising candidate for many groundbreaking applications and more specifically in van der Waals heterostructures. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are of high quality and relevant for future opto-electronic applications.

show abstract

Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

Cited by 14 publications

References 57 publications

Boron Carbonitride Nanosheet/ZnO Nanorod Heterojunctions for White-Light Emission

Boron Carbonitride Nanosheet/ZnO Nanorod Heterojunctions for White-Light Emission

Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Contact Info

Product

Resources

About