Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source

Abstract

We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide and a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon cooling, the carbon segregates to the nickel surface forming a graphene layer over the entire nickel surface. By wet etching of the nickel layer, the graphene layer was allowed to settle on the original substrate. Scanning tunneling microscopy (STM) as well as Raman spectroscopy has been performed for characterization of the layers. Further insight into the morphology of the layers has been gained by Raman mapping indicating micrometer-size graphene grains. Devices for electrical measurement have been manufactured exhibiting a modulation of the transfer current by backgate electric fields. The presented approach allows for mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.

A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment

“…During this stage, grain boundaries significantly influence graphene nucleation and growth. [41,[43][44] Previous experiments revealed that grain boundaries could induce nucleation 8 sites and form continuous non-uniform polycrystalline graphene film with numerous domain boundaries. [41,[43][44] Apparently, increasing copper grain size can reduce the grain boundaries and densities of nucleation sites.…”

Modulating charge density and inelastic optical response in graphene by atmospheric pressure localized intercalation through wrinkles

“…Inspecting phase contrast AFM images (SI, Figure S2) allows one to identify graphene-free and graphene-covered regions. 15 Figure 1a reveals that (i) graphene-free regions (named A hereafter) protrude out of the surface, (ii) around graphene edges and along wrinkles, flat ribbons (named B hereafter) whose height is substantially larger (see below) than the Ir atomic step edges, are found. The moiré observed with scanning tunneling microscopy (STM) under UHV before air exposure is no more visible with STM.…”

Segregation Phenomenon and Its Control in the Catalytic Growth of Graphene

“…3.3 常压体系中的偏析生长 上面介绍的偏析生长方法都是在真空体系下实现 的, 而要在常压下实现石墨烯的偏析生长需要加入额外 的碳源, 如加入无定形的 SiC [70] 、无定形的碳 [71] 、石 墨 [72] . [29] [73] ; 与 单层石墨烯不同, 具有 AB 堆垛的双层石墨烯在施加电 场的情况下可以打开高达 250 meV 的带隙 [74] , 使其应用 于逻辑器件成为可能; 三层石墨烯又会表现出新的量子 霍尔现象 [75] .…”