Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

Hu, PingAn; Wen, Zhenchao; Wang, Lifeng; Tan, Ping‐Heng; Xiao, Kai

doi:10.1021/nn300889c

Cited by 802 publications

(845 citation statements)

References 31 publications

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“…Because of this merit, Few layered 2DLMCs such as transition metal dichalcogenides (TMDs) (MoS 2 ,26, 27, 28 WS 2 ,29, 30, 31, 32, 33, 34, 35, 36 TiS 3 ,37 etc.) and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…Experimental studies have demonstrated synthesis of monolayers and or few layers of GaS, GaSe and InSe thin films. 10,[14][15][16][17][18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Wickramaratne

Zahid²,

Lake

2015

Journal of Applied Physics

129

114

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The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a 'Mexican hat' or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi 2 Se 3 , for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi 2 Se 3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

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“…Many layered 2D materials with a broad range of properties have been explored, from insulating h-BN and semi-metallic graphene to semiconducting layered metal chalcogenides (e.g., MoS 2 , WS 2 , GaSe, GaS). [1][2][3][4][5] Optical properties of graphene have been exploited in various photonic devices. [6][7][8][9] Recently, monolayer MoS 2 has garnered significant interest in nonlinear optics as the lack of inversion symmetry yields a non-vanishing secondorder susceptibility.…”

mentioning

confidence: 99%

Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy

Susoma

Karvonen

Säynätjoki

et al. 2016

Applied Physics Letters

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We report on the nonlinear optical properties of few-layer GaTe studied by multiphoton microscopy. Second and third harmonic generation from few-layer GaTe flakes were observed in this study with the laser pump wavelength of 1560 nm. These processes were found to be sensitive to the number of GaTe layers. The second- and third-order nonlinear susceptibilities of 2.7 × 10−9 esu (1.15 pm/V) and 1.4 × 10−8 esu (2 × 10−16 m2/V2) were estimated, respectively.

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Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

Cited by 802 publications

References 31 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy

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