Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy

Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, N.; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha

doi:10.1063/1.4941998

Cited by 68 publications

(55 citation statements)

References 28 publications

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“…At the moment, the observation that defects in h‐BN crystal can be used for single photon generation (similarly as nitrogen vacancies in diamond) has gathered large interest, deserving further investigation with NLO approaches. In addition, group III and IV metal chalcogenides have been experimentally demonstrated with high NLO responses . For example, various 2DLMs (e.g., GeSe and SnS) have been predicted to have giant NLO responses (e.g., the susceptibility tensor element χ (2) xyx of 5.16 × 10 6 pm 2 V −1 for monolayer GeSe).…”

Section: Fundamentals Of 2dlm‐based Nonlinear Opticsmentioning

confidence: 99%

Nonlinear Optics with 2D Layered Materials

et al. 2018

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2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

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Section: Fundamentals Of 2dlm‐based Nonlinear Opticsmentioning

confidence: 99%

Nonlinear Optics with 2D Layered Materials

et al. 2018

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“…13,14 GaTe also demonstrates very high levels of in-plane anisotropy, reflected in its electronic and optical properties. 15−17 However, progress in GaTe-based devices has been hindered by poor environmental stability. 18,19…”

Section: Introductionmentioning

confidence: 99%

Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

et al. 2019

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Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dramatically via encapsulation with graphene. Through examining Raman signatures of degradation, we show that the choice of substrate significantly impacts the degradation rate and that the process is accelerated by the transfer of GaTe to hydrophilic substrates such as SiO2/Si. We find that double encapsulation with both top and bottom graphene layers can extend the lifetime of the material for several weeks. The photoresponse of flakes encapsulated in this way is only reduced by 17.6 ± 0.4% after 2 weeks, whereas unencapsulated flakes display no response after this time. Our results demonstrate the potential for alternative, van der Waals material-based passivation strategies in unstable layered materials and highlight the need for careful selection of substrates for 2D electronic devices.

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“…10,15,16 With a moderate direct band gap of $1.7 eV, responsible for its high absorption coefficient and efficient electron-hole pair generation under photoexcitation, GaTe has demonstrated to have high photoresponsivity and small response times in photodetectors. Among its several possible applications solar cells, radiation detectors and thermoelectric devices 14,[17][18][19][20][21][22] are particularly promising. For the specific case of radiation detection, the high average atomic number of GaTe and its densely packed crystal structure confer it high stopping power for very energetic photons; that is, its dense electrosphere combined with the compact atomic structure maximizes the probability of high energy photons being captured by the material.…”

Section: Introductionmentioning

confidence: 99%

Band gap tuning of layered III-Te materials

Olmos-Asar

Leão

Fazzio

2018

Journal of Applied Physics

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Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.

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Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy

Cited by 68 publications

References 28 publications

Nonlinear Optics with 2D Layered Materials

Nonlinear Optics with 2D Layered Materials

Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

Band gap tuning of layered III-Te materials

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