2015
DOI: 10.1038/srep16741
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Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

Abstract: The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on … Show more

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Cited by 34 publications
(38 citation statements)
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“…48,49 It is well-known that vacancies are able to disrupt regular atomic structures and cause additional phonon scattering 50 . Therefore, here, we focus on Mo vacancy at the interface to understand the effect of Mo vacancy concentration on the thermal transport across the MoS 2 -graphene interfaces at room temperature.…”
Section: Effect Of Vacancy On Interfacial Thermal Transportmentioning
confidence: 99%
“…48,49 It is well-known that vacancies are able to disrupt regular atomic structures and cause additional phonon scattering 50 . Therefore, here, we focus on Mo vacancy at the interface to understand the effect of Mo vacancy concentration on the thermal transport across the MoS 2 -graphene interfaces at room temperature.…”
Section: Effect Of Vacancy On Interfacial Thermal Transportmentioning
confidence: 99%
“…Lateral h‐BN/graphene monolayers have been synthesized previously by chemical vapor deposition (CVD) on metal surfaces including Ni foils, Ru(0001), Rh(111), Ir(111), and various Cu substrates using methane (CH 4 ) as the carbon precursor and ammonia borane (NH 3 ‐BH 3 ) or borazine (B 3 N 3 H 6 ) as the B and N source. During CVD growth, the CC and BN bonds typically segregate to form separate domains of graphene and h‐BN .…”
mentioning
confidence: 99%
“…6 In general, the experimental observation of magnetic states in graphene nanostructures remains scarce and controversial, and one of the main difficulties in the realization of long-range magnetic structures reside in the growth and in the intrinsic irregularity of the sample edges. 5 However, in the last few years, we witnessed important advances in the synthesis and in the characterization of graphene nanostructure, e.g., at the interface with boron nitride, 7,8 and the fingerprints of atomically precise edges have been uniquely identified in the Raman spectra of GNRs, 9 paving the path toward graphene nanoelectronics.…”
Section: Introductionmentioning
confidence: 99%