Graphene nanoribbons (GNRs)—narrow stripes of graphene—have emerged as promising building blocks for nanoelectronic devices. Recent advances in bottom-up synthesis have allowed production of atomically well-defined armchair GNRs with different widths and doping. While all experimentally studied GNRs have exhibited wide bandgaps, theory predicts that every third armchair GNR (widths of N=3m+2, where m is an integer) should be nearly metallic with a very small bandgap. Here, we synthesize the narrowest possible GNR belonging to this family (five carbon atoms wide, N=5). We study the evolution of the electronic bandgap and orbital structure of GNR segments as a function of their length using low-temperature scanning tunnelling microscopy and density-functional theory calculations. Already GNRs with lengths of 5 nm reach almost metallic behaviour with ∼100 meV bandgap. Finally, we show that defects (kinks) in the GNRs do not strongly modify their electronic structure.
Graphene nanostructures, where quantum confinement opens an energy gap in the band structure, hold promise for future electronic devices. To realize the full potential of these materials, atomic-scale control over the contacts to graphene and the graphene nanostructure forming the active part of the device is required. The contacts should have a high transmission and yet not modify the electronic properties of the active region significantly to maintain the potentially exciting physics offered by the nanoscale honeycomb lattice. Here we show how contacting an atomically well-defined graphene nanoribbon to a metallic lead by a chemical bond via only one atom significantly influences the charge transport through the graphene nanoribbon but does not affect its electronic structure. Specifically, we find that creating well-defined contacts can suppress inelastic transport channels.
The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate contacts and more functionality directly into single ribbons by using heterostructures. Here, we use the on-surface synthesis approach to fabricate a metal-semiconductor junction and a tunnel barrier in a single graphene nanoribbon consisting of 5- and 7-atom wide segments. We characterize the atomic scale geometry and electronic structure by combined atomic force microscopy, scanning tunneling microscopy, and conductance measurements complemented by density functional theory and transport calculations. These junctions are relevant for developing contacts in all-graphene nanoribbon devices and creating diodes and transistors, and act as a first step toward complete electronic devices built into a single graphene nanoribbon.
Two-dimensional materials have unusual phonon spectra due to the presence of flexural (out-of-plane) modes. Although molecular dynamics simulations have been extensively used to study heat transport in such materials, conventional formalisms treat the phonon dynamics isotropically. Here, we decompose the microscopic heat current in atomistic simulations into in-plane and out-of-plane components, corresponding to in-plane and outof-plane phonon dynamics, respectively. This decomposition allows for direct computation of the corresponding thermal conductivity components in two-dimensional materials. We apply this decomposition to study heat transport in suspended graphene, using both equilibrium and nonequilibrium molecular dynamics simulations. We show that the flexural component is responsible for about two-thirds of the total thermal conductivity in unstrained graphene, and the acoustic flexural component is responsible for the logarithmic divergence of the conductivity when a sufficiently large tensile strain is applied.
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