Synthesis of Easily Transferred 2D Layered BiI<sub>3</sub> Nanoplates for Flexible Visible-Light Photodetectors

Wei, Qi; Chen, Jin‐hui; Ding, Peng; Shen, Bo; Yin, Jiang; Xu, Fei; Xia, Yidong; Liu, Zhiguo

doi:10.1021/acsami.8b02582

Cited by 54 publications

(55 citation statements)

References 43 publications

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“…In view of this, we propose a possible scheme that assembling high‐quality nanolayers (which can ensure outstanding photodetecting capability for the nanoscale detectors processed on them) into a nanostructured film may bring out a win–win result between both sides. This idea is implemented by synthesizing large‐area films (1 × 1 cm 2 ) made up of vertically grown BiI 3 nanoplates which have been proved to support excellent nanoscale photodetectors . The reproducible and sizeable photoresponses of the photodetectors fabricated on such films demonstrate equivalent performances with the single BiI 3 nanoplate‐based ones and indicate hopeful applications of such BiI 3 films for visible‐light detecting.…”

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confidence: 99%

“…In Figure a, the intuitive absorption spectrum transformed from a measured diffuse reflectance spectrum by the Kubelka–Munk (K–M) transformation demonstrates that the as‐grown BiI 3 films have an absorption range which starts around 730 nm and covers most of the visible‐light band. In addition, there is an obvious subabsorption within 700–730 nm which indicates the indirect bandgap of BiI 3 . In this case, the bandgap value can be calculated according to the equation,

\sqrt{F (R) h v} = A (h v - E_{g})

, where F ( R ) means the K–M function, h means the Planck's constant, and ν means the light frequency, A is a constant, and E g means the optical bandgap.…”

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confidence: 99%

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High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films

Wei

Wang

Yin

et al. 2019

Adv Elect Materials

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detecting abilities over a wide spectral range from ultraviolet to infrared and even terahertz. [8][9][10][11][12] In the past, the investigations on 2DLMs devices (including photodetectors) focused mainly on the nanoscale samples, such as the devices processed on exfoliated monolayers, nanosheets, or nanoplates, for fundamental researches. While recently, driven by the growing demands for practically using of those promising devices, great efforts have been made to prepare large-scale continuous 2DLMs films. [13][14][15] For instance, both chemical vapor deposition and solution-processing methods were used to produce waferscale graphene and TMDs films, [15][16][17] and some novel liquid metal facilitated synthesis approaches were also applied to synthesize large-scale films of 2D metal oxides and their derivatives. [18][19][20][21] Some of those films have been demonstrated beneficial to support the large-area arrays or the integrated devices which require high sample density, good thickness uniformity, and controllable location. [13][14][15][16][17][18][19] Unfortunately, there always remains a trade-off between the film size and the performances of the devices on them. In the aspect of photodetectors, most of the devices built on large-scale films have attenuated qualities comparing with those ones produced on nanoscale samples. [22][23][24] For example, the responsivity of the MoS 2 film photodetectors may decay of two orders of magnitude than that of the nanoscale devices . [8,23] Thus, it still remains a challenge to grow 2DLMs films which guarantee not only large lateral size but also excellent device performances. In view of this, we propose a possible scheme that assembling high-quality nanolayers (which can ensure outstanding photodetecting capability for the nanoscale detectors processed on them) into a nanostructured film may bring out a win-win result between both sides. This idea is implemented by synthesizing large-area films (1 × 1 cm 2 ) made up of vertically grown BiI 3 nanoplates which have been proved to support excellent nanoscale photodetectors. [12] The reproducible and sizeable photoresponses of the photodetectors fabricated on such films demonstrate equivalent performances with the single BiI 3 nanoplate-based ones and indicate hopeful applications of such BiI 3 films for visible-light detecting.As shown in the scanning electron microscopy (SEM) image in Figure 1a, the BiI 3 films used to construct the photodetecting devices consist of a large number of vertical and oblique nanoplates grown via physical vapor deposition (PVD) method. An enlarged SEM image (Figure 1b) revealsThe growth of large-scale films forms the cornerstone for future integrated photodetection applications of 2D materials. However, there is still an unwelcome trade-off between the size of these films and the performances of devices fabricated using them. To deal with this issue, a possible scheme for film assembly is proposed using high-quality nanolayers to achieve both outstanding device performance and large film ar...

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confidence: 99%

\sqrt{F (R) h v} = A (h v - E_{g})

, where F ( R ) means the K–M function, h means the Planck's constant, and ν means the light frequency, A is a constant, and E g means the optical bandgap.…”

mentioning

confidence: 99%

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films

Wei

Wang

Yin

et al. 2019

Adv Elect Materials

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“…So far, PDs based on single crystal, film, and nanostructured materials have been applied for building designed PDs to detect ultraviolet [12][13][14], visible [15][16][17][18], or infrared [19][20][21][22][23][24][25] photons with actual needs. For example, highly narrow band (bandwidth of 10 nm) solar-blind photodetectors of β-Ga 2 O 3 single crystals with a peak responsivity of 0.23 A/W at 262 nm and an EQE of 110% were reported [26].…”

Section: Introductionmentioning

confidence: 99%

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

et al. 2020

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Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

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“…[1][2][3] Currently, the development of traditional memory cannot follow Moore's law; therefore, that used (CH 3 NH 3 ) 3 Sb 2 Br 9 as an insulator, exploiting the selfformation of the metal Sb filament, to obtain an on/off ratio of ≈100 and a retention of 10 4 s. [14] Of 2D materials and of precursors of bismuth-related perovskite, BiI 3 , which has a high absorption coefficient in the visible region and which is composed of heavy atoms, has been considered a promising material in the field of photovoltaics, photodetection, and gamma-ray sensing. [32][33][34][35][36][37][38][39] Each layer of the BiI 3 structure consists of the I-Bi-I ionic bonding, and the interlayer is stacked by van der Waals forces. In this study, to investigate the resistive-switching property and the flexibility of BiI 3 , we fabricated an RRAM by using the simple structure of Au/ BiI 3 /van der Waals materials/copper foil.…”

Section: Introductionmentioning

confidence: 99%

“…Of 2D materials and of precursors of bismuth‐related perovskite, BiI 3 , which has a high absorption coefficient in the visible region and which is composed of heavy atoms, has been considered a promising material in the field of photovoltaics, photodetection, and gamma‐ray sensing. [ 32–39 ] Each layer of the BiI 3 structure consists of the I‐Bi‐I ionic bonding, and the interlayer is stacked by van der Waals forces. In this study, to investigate the resistive‐switching property and the flexibility of BiI 3 , we fabricated an RRAM by using the simple structure of Au/BiI 3 /van der Waals materials/copper foil.…”

Section: Introductionmentioning

confidence: 99%

Forming‐Free, Nonvolatile, and Flexible Resistive Random‐Access Memory Using Bismuth Iodide/van der Waals Materials Heterostructures

Kuo

et al. 2020

Adv Materials Inter

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next-generation memory devices such as ferroelectric random-access memory, magnetoresistive random-access memory, and resistive random-access memory (RRAM) have been intensively researched and developed. [4-12] Of these innovative nonvolatile memories, RRAM offers low power consumption, fast response speed, long retention time, high scalability, multistate data-storage capability, and a simple metalinsulator-metal structure. [9,13,14] Information storage in the RRAM is achieved by altering the resistance of its insulator. The adjustable resistance of the insulator is achieved by forming metallic or defect filaments with low resistance either by electrochemical metal dissolution or by changing the valence charge of the insulator. [15,16] Generally, the insulator used is either a transition metal oxide or perovskite oxide such as Sr 2 TiO 4 and Cr-doped SrZrO 3. [16,17] However, the synthesis of these materials often requires high temperatures and highly complex fabrication processes that are incompatible with flexible applications. [18,19] Furthermore, a high voltage is required to induce a soft breakdown of the oxide layer, which is detrimental to low-power operation. Lead-based perovskite has recently demonstrated great potential for the fabrication of RRAMs, because of its compact morphology, lowtemperature solution processability, and ionic-transport property. It functions analogously to the human synapse and offers flexible applications with a high on/off ratio, multistate-storage capability, and low set/reset voltage. [13-15,20-27] For example, Choi et al. fabricated an organo-lead halide perovskite RRAM with an on/off ratio of 10 6 , low set/reset voltage of 0.13 V, and four states of information storage. [25] Owing to the high absorption coefficient of perovskite, Zhou demonstrated optoelectronic devices with versatile functions such as photo-sensing, processing, and bit storage with the help of light pulses. [28] However, the structural stability of the perovskite in the air and the issue of its toxicity have led to uncertainty regarding its suitability as a commercial product. [29,30] To solve the issue of toxicity, Park et al. fabricated a zero-dimensional bismuth-based perovskite that had the crystal formula of A 3 Bi 2 I 9 and demonstrated a forming-free device by lowering the defect formation barrier with substitution of sodium into the Bi 3+ cation site. [31] Yang et al. reported forming-free resistive-switching devices Resistive switching devices based on halide perovskites exhibit promising potential in flexible resistive random-access memory (RRAM) owing to low fabrication cost and low processing temperature. However, the toxicity of these materials hinders their commercialization. Herein, bismuth iodide (BiI 3) is employed as an insulator in RRAM. A monolayer of graphene or hexagonal boron nitride (h-BN) is employed as a buffer layer to achieve van der Waals epitaxy of BiI 3 and meanwhile to prevent the intrusion of copper atoms. Thus, the film quality of the BiI 3 layer is greatly improved. Res...

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Synthesis of Easily Transferred 2D Layered BiI₃ Nanoplates for Flexible Visible-Light Photodetectors

Cited by 54 publications

References 43 publications

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Forming‐Free, Nonvolatile, and Flexible Resistive Random‐Access Memory Using Bismuth Iodide/van der Waals Materials Heterostructures

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Synthesis of Easily Transferred 2D Layered BiI3 Nanoplates for Flexible Visible-Light Photodetectors

Cited by 54 publications

References 43 publications

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI3 Films

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI3 Films

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Forming‐Free, Nonvolatile, and Flexible Resistive Random‐Access Memory Using Bismuth Iodide/van der Waals Materials Heterostructures

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Synthesis of Easily Transferred 2D Layered BiI₃ Nanoplates for Flexible Visible-Light Photodetectors

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI₃ Films