Synthesis of Diamonds and Their Identification

D’Haenens-Johansson, Ulrika F. S.; Butler, James E.; Katrusha, A. N.

doi:10.2138/rmg.2022.88.13

Cited by 16 publications

(6 citation statements)

References 338 publications

(756 reference statements)

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“…Along with this, in the HPHT synthesis conducted above the graphite–diamond boundary line, an uncertainty in line position may lead to some defects during diamond crystallization from the graphite phase (plane incompleteness, inclusions). A detailed comparison of the methods for the diamond synthesis is given in reviews [ 24 , 25 ].…”

Section: Methodsmentioning

confidence: 99%

X-ray Excited Optical Luminescence of Eu in Diamond Crystals Synthesized at High Pressure High Temperature

et al. 2023

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Powder diamonds with integrated europium atoms were synthesized at high pressure (7.7 GPa) and temperature (1800 °C) from a mixture of pentaerythritol with pyrolyzate of diphthalocyanine (C64H32N16Eu) being a special precursor. In diamonds prepared by X-ray fluorescence spectroscopy, we have found a concentration of Eu atoms of 51 ± 5 ppm that is by two orders of magnitude greater than that in natural and synthetic diamonds. X-ray diffraction, SEM, X-ray exited optical luminescence, and Raman and IR spectroscopy have confirmed the formation of high-quality diamond monocrystals containing Eu and a substantial amount of nitrogen (~500 ppm). Numerical simulation has allowed us to determine the energy cost of 5.8 eV needed for the incorporation of a single Eu atom with adjacent vacancy into growing diamond crystal (528 carbons).

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Section: Methodsmentioning

confidence: 99%

X-ray Excited Optical Luminescence of Eu in Diamond Crystals Synthesized at High Pressure High Temperature

et al. 2023

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“…On the other hand, CVD uses the graphite region of the carbon phase diagram [ 63 ]. Figure 6 shows the conditions for the HPHT and CVD diamond synthesis processes in the carbon phase diagram [ 64 ]. The CVD process is favored for electronics applications because it can produce a large substrate while keeping the dislocation density in an acceptable range.…”

Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

“…The diamond source is kept on the top side of the container, and in between there is a solution of metals such as Ni, Co, Fe, Mn, Cr, Ta, or Nb. The condition set for the diamond to grow is 5–6 GPa pressure and 1300–1600 °C temperature [ 63 , 64 ]. Inside the vessel, a temperature gradient of 20–50 °C is created where the top side/diamond source is on the hotter side than the seed crystal/bottom side.…”

Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

“…This melts the diamond source in the Fe, Ni, Co, Mn, Cr, Ta, or Nb solution, making it supersaturated. The melted diamond source is then transported to the seed crystal as HPHT crystallized diamond [ 64 ]. Depending on the different growth rates at different crystal directions, HPHT can produce diamond crystals shaped in various ways, such as cubes or octahedral [ 70 , 71 , 72 , 73 , 74 , 75 , 76 , 77 ].…”

Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

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Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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“…However, nano-and microcrystalline diamond can only be obtained from PAHs at very high pressures. Attempts to synthesize diamond from PAHs at P-T parameters typical for HPHT diamond technology (5-6 GPa, 1300-1600 °C) 17,18 were not successful even in the presence of a solvent/catalyst, such as invar (Fe-Ni) and kovar (Fe-Ni-Co) alloys, which are used for production of synthetic diamonds in industry. At the same time, addition of citric acid (C 6 H 8 O 7 ) to the Ni 70 Mn 25 Co 5graphite system at pressures ranging from 5.5 GPa to 6.5 GPa and temperatures from 1250 °C to 1550 °C is known to lead to growth of defect-rich diamond crystals.…”

Section: Introductionmentioning

confidence: 99%