Synthesis of diamondlike films by an electrochemical method at atmospheric pressure and low temperature

Novikov, V. A.; Dymont, V. P.

doi:10.1063/1.118355

Cited by 71 publications

(21 citation statements)

References 4 publications

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“…9,10 Electrodeposition from the liquid phase has a number of advantages over other methods, such as the simplicity of apparatus and low-depositing temperature, avoiding difficulties the conventional methods generally confront. [9][10][11][12] Thus, to synthesize carbon nitride (CN x ) materials from the liquid phase not only can broaden their applications but also has scientific significance.…”

Section: Introductionmentioning

confidence: 99%

Attempt to deposit carbon nitride films by electrodeposition from an organic liquid

Jiu

Cai

et al. 1999

Phys. Rev. B

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Carbon nitride films were synthesized by electrodeposition from an organic liquid on silicon substrates at temperatures lower than 80°C. The N/C ratio in the films is about 0.25. The x-ray diffraction measurement indicates that the film contains some C 3 N 4 polycrystalline phases. The Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy analyses suggest the presence of both single and double carbon-nitrogen bonds. The deposition mechanisms are also discussed. Our paper shows that the electrodeposition technique may hold some promise for synthesizing the metastable compound C 3 N 4 in the liquid phase. ͓S0163-1829͑99͒05403-X͔

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Section: Introductionmentioning

confidence: 99%

Attempt to deposit carbon nitride films by electrodeposition from an organic liquid

Jiu

Cai

et al. 1999

Phys. Rev. B

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“…Various physical and chemical techniques such as, sputtering [1], pulsed laser [2], radio frequency (rf) [3], electrolysis [4], microwave enhanced [5,6], plasma beam [7], hot filament [8], direct current (dc) discharge plasma [9], were used to make DLC and a-C:H films. The gases which are used in most of these deposition methods are C 2 H 2 , CH 4 and C 2 H 6 pure or mixed with hydrogen.…”

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confidence: 99%

Diamond-like carbon film from liquid gas on metallic substrates

Vesaghi

Shafiekhani

1998

J. Phys. D: Appl. Phys.

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Liquid gas was used to produce DLC films on Cu, Al and steel substrates by DC plasma technique. The absorption in IR reflectance indicates, grown films are DLC. By deconvolution of room temperature UVvisible spectra of the films grown at 50 mtorr and 200 • C, in addition to the spectra lines reported for CL, PL, PLC and ESR, some new spectra lines were obtained. We also, have seen exciton absorption line at room temperature.PACS number: 71.35.C, 78.40, 81.05.T, 78.66, 61.72.J Typeset using REVT E X * e-mail address: vesaghi@physic.sharif.ac.ir † e-mail address: ashafie@theory.ipm. [9], were used to make DLC and a-C:H films. The gases which are used in most of these deposition methods are C 2 H 2 , CH 4 and C 2 H 6 pure or mixed with hydrogen. In all these techniques neutral or ionized atoms of carbon or various hydrocarbon precursor ions have been produced. These species with free (dangling) hand reach substrate, and those with sufficient time and energy stick to substrate and to each other.It is now well understood that films deposited by these techniques are amorphous or diamond-like carbon with no-long range order in structure. Because of the non-equilibrium nature of the growth, there must be some vacancies in these films [5]. These vacancies are produced by the impact of the ions reaching the growth surfaces with sufficient energy, sputtering off weak bonded species or damaging these surfaces. Also, there are vacancies in the domain-walls of the microcrystals. The vacancies at the surface of substrate with film are less important since the area of this surface is much smaller than total area of domain-walls. The quality of the film is dependent on the nature and the numbers of these defects. If one understands the nature of such defects and is able to control their numbers, one would be able to control the film quality and to use them as a source for coherent luminescence and other purposes.Cathodoluminescence (CL) [10,11], photoluminescence (PL) [2,6], positron-life time spectroscopy (PLS) [12] and electron-spin resonance (ESR) [13] methods are used for vacancy identification.The aim of this work is to show the possibility of making DLC films from liquid gas on metallic substrates and to obtain information about vacancies from UV-visible reflectance of DLC films.Carbon films were deposited on polished 2 × 3cm copper, steel and aluminium substrates from liquid gas (60% Butane and 40% Propane) by dc plasma technique. The substrate temperature was 200 • C and it was grounded. The chamber was flashed from 1 mtorr three times prior to deposition. The pressure and the gas flow were kept constant during deposition. Saturation voltage was applied to anode. Double beam Perkin-Elmer UV-visible spectrometer was used to measure the reflection and absorption of the films. The angle of incident beam was 6 • and measurements were done at room temperature. IR spectra was obtained at room temperature by Perkin-Elmer IR spectrometer. FIGURESFIG. 1. Room temperature IR spectra in a reflective mode for DLC film de...

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“…The authors attempted at a new, almost unstudied method of DLC deposition and carried out experiments with deposition of DLC films on p‐type silicon substrate using solution growth technique (electrolysis method) . In structure analysis of thus obtained films through Raman spectrometry, DLC‐related peaks (around 1336 cm −1 and 1579 cm −1 ) were observed in part of films .…”

Section: Introductionmentioning

confidence: 99%

Deposition of uniform carbon film on silicon substrate by chemical solution process

Hashimoto

Suzumura

2019

Elect Comm in Japan

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Uniform carbon film was grown on silicon substrate treated by low energy electron at temperature of 60° in the methanol solution. The treatment was carried out to modify the silicon surface by electron irradiation of 50 eV using electron‐beam‐excited plasma. From the results of Raman and X‐ray diffraction spectra, it was confirmed that the film is crystalline carbon containing small amounts of diamond component. The ID/IG ratio and work function of carbon film increased with increasing treatment time of the silicon substrate. The increases of ID/IG ratio and work function suggest that the carbon film had greater concentration of diamond component. On the other hand, the surface roughness and work function of the silicon substrate increased due to an increase of treatment time. The variations of physical and electronic properties are attributed to carbon deposition during the growth process.

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Synthesis of diamondlike films by an electrochemical method at atmospheric pressure and low temperature

Cited by 71 publications

References 4 publications

Attempt to deposit carbon nitride films by electrodeposition from an organic liquid

Attempt to deposit carbon nitride films by electrodeposition from an organic liquid

Diamond-like carbon film from liquid gas on metallic substrates

Deposition of uniform carbon film on silicon substrate by chemical solution process

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