Synthesis of cubic boron nitride films with mean ion energies of a few eV

Abstract

Articles you may be interested inSynthesis of cubic boron nitride films on Si tips via chemical vapor deposition and the field emission properties J. Vac. Sci. Technol. B 32, 02B102 (2014); 10.1116/1.4843075Quantitative study of ion bombardment induced phase transformation of cubic boron nitride by reflective electron energy-loss spectroscopy Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films J.The lowest threshold energy of ion bombardment for cubic boron nitride ͑cBN͒ film deposition is presented. cBN films are prepared on positively biased Si ͑100͒ substrates from boron trifluoride ͑BF 3 ͒ gas in the high-density source region of an inductively coupled plasma with mean ion impact energies from 45 down to a few eV or less. The great decrease in the threshold ion energy is mainly attributed to specific chemical effects of fluorine as well as high ion-to-boron flux ratios. The results show evidence for the existence of a way to deposit cBN films through quasistatic chemical processes under ultralow-energy ion impact.

Effect of plasma energy on enhancing biocompatibility and hemocompatibility of diamond-like carbon film with various titanium concentrations

“…To create a surface for desired bioreactions, a promising approach is to start from an existing biocompatible coating. Owing to enhancing biocompatibility and hemocompatibility of biomaiertals [2][3][4][5][12][13][14][15][16], there is a growing interest in the application of carbon-based films, such as DLC film, on high technology devices [19][20][21][22] and biomedical implants as well as microsurgery devices [23,24]. Furthermore, DLC film is a spurious base coating to be alloyed with various elements.…”

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

“…Conventional thin film growth methods, e.g., physical-or chemical-vapor deposition, have been unsuccessful in the epitaxial growth of single-crystal c-BN. [13][14][15][16][17][18][19][20][21][22] Ion-beam irradiation of the growth surface was found to be effective in forming c-BN grains or particles though c-BN does not grow epitaxially because a t-BN layer is formed in between the c-BN and substrate. Using dual ion-beam sputtering, Zhang et al reported heteroepitaxial growth of single-crystal c-BN (001) films on diamond (001) substrates without the formation of t-BN, 23 though the growth mechanism itself has not been clarified.…”

Effect of low‐energy ion impact on the structure of hexagonal boron nitride films studied in surface‐wave plasma

“…A shift up of plasma potential with V s is caused to achieve the current balance between the positively biased substrate and the grounded chamber. 15 The above results indicate that the mean ion energy onto the substrate increases with the magnitude of negative V s and decreases down to nearly 0 eV with the magnitude of positive V s . In addition, for V s above +20 V, incidence of negative ion species onto the substrate may be possible.…”

“…The plasma potential remains in the range of 16 to 18 V for V s between −100 and +15 V and increases nearly in proportion to V s for positive V s above +20 V. Correspondingly, the sheath potential decreased from 116 to a few V for V s between −100 and +15 V and becomes as low as 0 V for positive V s above +20 V. With increasing V s , the ion current density decreases slightly from about 70 to 55 mA cm −2 , corresponding to the ion density and flux of the order of 10 11 cm −3 and 10 17 cm −2 second −1 . A shift up of plasma potential with V s is caused to achieve the current balance between the positively biased substrate and the grounded chamber . The above results indicate that the mean ion energy onto the substrate increases with the magnitude of negative V s and decreases down to nearly 0 eV with the magnitude of positive V s .…”