Synthesis of c-axis oriented AlN thin films at room temperature

Tavşanoğlu, Tolga

doi:10.1080/02670844.2016.1235522

Cited by 13 publications

(7 citation statements)

References 38 publications

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“…For a front electrode with thin film solar cells, light trapping structure plays a decisive role in scattering the incoming light into the silicon absorber layer [1][2][3][4]. But it does not work for good transparent conducting oxides (TCOs).…”

Section: Introductionmentioning

confidence: 99%

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Gao

Wang

et al. 2018

Surface Engineering

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Aluminium-doped zinc oxide (AZO)/fluorine-doped tin dioxide (FTO) double-layered transparent conducting films were manufactured on quartz glass substrates by spray pyrolysis. Like top films, AZO has marvellous reduction-resistant properties during a-Si:H deposition. However, as thin films with features of self-textured surfaces, SnO 2 :F (FTO) provides high light scattering for front electrode in photovoltaic devices. The distribution of elements in surface and interface has been analysed by glow discharge spectrometer. The anti-reductive behaviour in ambient hydrogen plasma condition was studied and the results showed that hydrogen ions are dispersed in the AZO layer but not diffused to the FTO layer, thus avoiding the reduction of SnO 2 to SnO or Sn during hydrogen plasma bombardment. Besides, this phenomenon also indicated that the coating of the AZO layer on FTO electrode can increase the resistance of FTO to hydrogen. AZO film protects FTO from reduction, and the resistivity to hydrogen plasma of AZO/FTO bilayer films has been improved.

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Section: Introductionmentioning

confidence: 99%

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Gao

Wang

et al. 2018

Surface Engineering

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“…In addition to high refractive index, AlN has the characteristic of high transmittance. Many literatures [26][27][28] reported that AlN films with more than 80% transmittance in visible band can be obtained by DC magnetron sputtering technology. AlN films with high refractive index and light transmittance have excellent properties for optoelectronic applications, such as solar cell protective coatings [26] and heat dissipation material for high power lighting devices [29].…”

Section: Resultsmentioning

confidence: 99%

Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

Han

Cui

Xing

et al. 2020

Micro & Nano Letters

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Aluminum nitride (AlN) films were deposited on Si (100) substrate at room temperature in different N 2 flow ratios (N 2 /(N 2 + Ar)) by direct current (DC) magnetron sputtering. AlN films were prepared with the N 2 flow ratios from 20 to 50%. The intensity of X-ray diffraction peak on (002) plane enhanced with the increase of N 2 flow ratio. When the flow ratio of N 2 was 50%, the AlN film tended to be the most preferred orientation of (002) plane with the value of full width half maximum being 0.34°. Optical property was studied by ellipsometer and the refractive index of the samples was between 1.92 and 2.05. According to the Fourier transform infrared spectroscopy, the density of Al-N bonds went up gradually and the tensile stress had a rising trend with the increasing N 2 flow ratio. In short, this work is helpful for the growth of AlN buffer layer deposited on Si (100) substrate.

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“…Secondly, AlN has the characteristics of high thermal conductivity and exceedingly good electronic properties, which makes it an excellent material for high-power electronic devices [2,3]. Moreover, AlN along the C-axis has been used in surface acoustic wave devices due to its good piezoelectric properties [4]. In addition, the lattice constants and thermal expansion coefficient of an AlN crystal are similar to those of a GaN crystal, which makes the AlN crystal suitable as a substrate material for epitaxial growth of the GaN crystal [5].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of AlN Nanowires by Al-Sn Flux Method

haoxin

Chen

et al. 2022

Crystals

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This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy (TEM) show that the growth direction of AlN nanowires was perpendicular to the C axis. The photoluminescence (PL) spectrum of AlN nanowires shows a broad peak, which is ascribed to the defect levels in the AlN bandgap. This work provides a novel method for growing AlN nanowires, which offers a potential material for the application of photoelectron devices.

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Synthesis of c-axis oriented AlN thin films at room temperature

Cited by 13 publications

References 38 publications

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

Synthesis of AlN Nanowires by Al-Sn Flux Method

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