Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

Abstract

Aluminum nitride (AlN) films were deposited on Si (100) substrate at room temperature in different N 2 flow ratios (N 2 /(N 2 + Ar)) by direct current (DC) magnetron sputtering. AlN films were prepared with the N 2 flow ratios from 20 to 50%. The intensity of X-ray diffraction peak on (002) plane enhanced with the increase of N 2 flow ratio. When the flow ratio of N 2 was 50%, the AlN film tended to be the most preferred orientation of (002) plane with the value of full width half maximum being 0.34°. Optical property was studied by ellipsometer and the refractive index of the samples was between 1.92 and 2.05. According to the Fourier transform infrared spectroscopy, the density of Al-N bonds went up gradually and the tensile stress had a rising trend with the increasing N 2 flow ratio. In short, this work is helpful for the growth of AlN buffer layer deposited on Si (100) substrate.

Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm

“…It has been reported that AlN crystal quality can deteriorate when deposited under the low F N2 . [ 41 ] However, as seen from the nitrogen concentration shown in Table S1, Supporting Information, the nitrogen concentration showed a negligible difference between the samples. Therefore, the improvement of crystallinity was not due to the difference in the chemical composition of each sample.…”

Effects of Different Nitrogen Flow Rates on Structure and Optical Characteristics in AlN Films by Reactive Magnetron Sputtering

“…Among these methods, magnetron sputtering, MBE, MOCVD, and PLD stand out as prominent techniques [8,9]. MBE and MOCVD technologies are renowned for their ability to produce lms of exceptional quality, Their cost and deposition rates limitations impede their widespread industrial adoption [10]. On the other hand, magnetron sputtering offers several advantages, including uniform lm deposition, ease of operation, and precise control, positioning it as a well-established and preferred method for large-scale production of high-quality AlN thin lms [11].…”

Defect regulation of AlN films based on Al-rich AlN targets

“…There are two common targets used: Al target and AlN target [20][21][22][23]. Much work so far has indicated that the preparation of AlN films based on Al target hardly ensure an exact composition ratio of films [24][25][26]. Some researchers obtained AlN films using AlN target, which had solved the problem of element composition ratio [27].…”