2011
DOI: 10.1007/s11664-011-1662-5
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Synthesis of c-Axis Inclined AlN Films in an Off-Center System for Shear Wave Devices

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Cited by 8 publications
(7 citation statements)
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References 24 publications
(19 reference statements)
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“…Therefore, the development of wurtzite (002) or c-axis oriented phase of AlN NFs is vital for most of these applications to obtain higher values of the electromechanical coupling factor, k2t [108]. So far, several methods have been developed for AlN TFs deposition, such as chemical vapour deposition [108,109], pulsed laser ablation deposition [110,111], molecular beam epitaxy [112], the electron shower method [113], dual ion beam deposition [114,115], reactive radio-frequency (RF) magnetron sputtering [116][117][118], reactive mid-frequency (MF) reactive sputtering [119], reactive pulsed direct-current (DC) unbalanced magnetron sputtering [120] and hydride vapour phase epitaxy (HVPE) [121][122][123][124][125]. Most of these methods can be applied to grow AlN TFs that are preferentially oriented to the c-axis on various substrates under suitable deposition conditions.…”
Section: D Aln Thin Films (Tfs)mentioning
confidence: 99%
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“…Therefore, the development of wurtzite (002) or c-axis oriented phase of AlN NFs is vital for most of these applications to obtain higher values of the electromechanical coupling factor, k2t [108]. So far, several methods have been developed for AlN TFs deposition, such as chemical vapour deposition [108,109], pulsed laser ablation deposition [110,111], molecular beam epitaxy [112], the electron shower method [113], dual ion beam deposition [114,115], reactive radio-frequency (RF) magnetron sputtering [116][117][118], reactive mid-frequency (MF) reactive sputtering [119], reactive pulsed direct-current (DC) unbalanced magnetron sputtering [120] and hydride vapour phase epitaxy (HVPE) [121][122][123][124][125]. Most of these methods can be applied to grow AlN TFs that are preferentially oriented to the c-axis on various substrates under suitable deposition conditions.…”
Section: D Aln Thin Films (Tfs)mentioning
confidence: 99%
“…By optimising these parameters, AlN TFs with preliminarily designed properties can be grown successfully. [116], (c) [117]); (d) [118]).…”
Section: D Aln Thin Films (Tfs)mentioning
confidence: 99%
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“…A detailed description of the fabrication process is given in our previous work [14]. The metal films were deposited using the JGP450 sputtering system.…”
Section: Fabrication Of Fbarmentioning
confidence: 99%