Synthesis of anodic silicon oxide films in water-organic solutions containing orthophosphoric acid

Baranov, I. L.; Tabulina, L. V.; Stanovaya, L. S.; Rusal’skaya, T. G.

doi:10.1134/s1023193506040069

Cited by 2 publications

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References 2 publications

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“…In this Letter, oxide films are synthesised in 2.7 and 3.7 vol% H 2 O-added electrolytes. To study the effect of H 2 O concentration on oxide growth behaviour, the cell voltage during oxide growth is recorded at 1 min intervals until the forming voltage reaches the predetermined voltage of 110 V. This voltage value is chosen to produce oxide films of ∼50 nm thickness [18,19]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline {100} silicon

Ashok

Pal

2016

Micro & Nano Letters

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In the fabrication of crystalline silicon-based solar cells, silicon surface is usually texturised by wet anisotropic etchant without using any masking pattern. This method provides randomly oriented upright pyramids (or hillocks) of varying sizes. However, a surface textured with inverted pyramids yields high efficiency compared with the one textured with normal pyramids. Silicon dioxide thin films synthesised using anodic oxidation technique at room temperature are explored as etch mask in KOH solutions to texturise the Si{100} surface with inverted pyramids without patterning of the oxide layer using lithography. Oxide films of ∼50 nm thickness are synthesised in different compositions of the electrolyte under potentiodynamic regime. Thickness uniformity and refractive index of the as-grown oxide films are measured using spectroscopic ellipsometry. Scanning electron microscope is primarily used to inspect the etched surface morphology. The composition of the electrolyte, KOH concentration and etching time are optimised for the maximum surface coverage of inverted pyramids. The surface texturing process demonstrated is very simple and economic as it utilises anodic silicon dioxide as an etch mask, which is deposited by a simple experimental setup and the process does not involve any lithography step.

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Section: Resultsmentioning

confidence: 99%

Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline {100} silicon

Ashok

Pal

2016

Micro & Nano Letters

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Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride

Mileshko

2020

Surf. Engin. Appl.Electrochem.

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Synthesis of anodic silicon oxide films in water-organic solutions containing orthophosphoric acid

Cited by 2 publications

References 2 publications

Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline {100} silicon

Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline {100} silicon

Similarity in the Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Silicon Carbide, and Nitride

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