2019
DOI: 10.1002/ejic.201901059
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Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction under High Pressure

Abstract: Novel ternary nitride semiconductor MgSnN 2 was synthesized using the metathesis reaction under high pressure (P = 5.5 GPa/T = 850°C/1 h). MgSnN 2 obtained in this study showed a rocksalt structure, although we have reported that ZnSnN 2 synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN 2 with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN 2 is estimated to be 2.3 eV and it shows a distinct [a] High pressure group,

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Cited by 40 publications
(55 citation statements)
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“…Mg is another element that prefers +2 oxidation states, but we did not consider it because we restricted our focus to materials that are stable in the 2H and 3C polymorphs. MgO, MgS, and MgSe favor the rock-salt structure [23], and there is a report of a rock-salt type synthesis of MgSnN 2 [32]. Similarly, Si and Ge can substitute for Sn, while N sites can be occupied by P, As, and Sb atoms.…”
Section: Resultsmentioning
confidence: 99%
“…Mg is another element that prefers +2 oxidation states, but we did not consider it because we restricted our focus to materials that are stable in the 2H and 3C polymorphs. MgO, MgS, and MgSe favor the rock-salt structure [23], and there is a report of a rock-salt type synthesis of MgSnN 2 [32]. Similarly, Si and Ge can substitute for Sn, while N sites can be occupied by P, As, and Sb atoms.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore our compound has not reported any toxic nature during its past experimental and theoretical work. This can be stated in the literature review from [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”
Section: B) Optical Property Analysismentioning
confidence: 99%
“…The material has been quoted aptly for short-wavelength absorber material for photovoltaic applications [7]. With the use of metathesis reaction under extreme pressure, MgSnN 2 a unique ternary nitride semiconductor compound is obtained [8]. In another work, optoelectronic investigation of V doped MgSiN 2 has been done using the first principle method.…”
Section: Introductionmentioning
confidence: 99%
“…MgSnN 2 ) have been shown to co-crystallize in both of these configurations at certain growth conditions, such as at ambient temperature at Mg-rich stoichiometries or at increased synthesis temperature on GaN substrates. [7,13,14] However, these two structure classes are just a small subset of possible structure classes in the rich space of ternary nitrides; it remains unknown which other II-IV-N 2 polymorph structures and chemistries are stabilizable.…”
Section: Introductionmentioning
confidence: 99%