Synthesis, Microstructure, and Cathodoluminescence of [0001]-Oriented GaN Nanorods Grown on Conductive Graphite Substrate

Yuan, Fang; Liu, Baodan; Wang, Zaien; Yang, Bing; Yin, Yao; Dierre, Benjamin; Sekiguchi, Takashi; Zhang, Guifeng; Jiang, Xin

doi:10.1021/am403876e

Cited by 33 publications

(32 citation statements)

References 48 publications

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“…2a-c). The same morphology has once been observed in GaN nanorods grown on a graphite substrate in our previous work 37 and it is assumed that the formation of such corrugated morphology can be regarded as a combined effort of both the oscillation in nanowires' radial growth 38 and the competing result of electrostatic interaction energy in the concave and convex planes.…”

Section: Resultssupporting

confidence: 69%

“…It is assumed that the corrugated morphology is complied with the Helmholtz principle 41 of minimum energy dissipation, where the nanowires are enclosed by Ga 3+ -terminated (1011) and N 3 -terminated (1011) polar surfaces to maintain the minimization of the energy of the system. 37,42 Initially, the Ga and N atoms are arranged in the c-plane of WZ-GaN with a favorite hexagonal shape, followed by the atoms repeatedly deposited on the previously formed GaN layer. Clearly, the deposition rate of the GaN layer along the c-axis direction is much faster than that on the two (1011) or (1011) sidewalls, leading to the formation of a one-dimensional morphology.…”

Section: Resultsmentioning

confidence: 99%

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Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires

Liu

Yang

et al. 2017

Nanoscale

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Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)∥(0001) and (101[combining macron]0)∥(112[combining macron]0). Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

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Section: Resultssupporting

confidence: 69%

Section: Resultsmentioning

confidence: 99%

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires

Liu

Yang

et al. 2017

Nanoscale

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“…From these crystallographic analyses, by using WinX-morph Software [35] on the basis of the above relation, it can be determined that the side facets of InN nanonecklace are { } 1 1 10 planes. In fact, similar corrugated growth patterns were also observed in 1D wurtzite stacked-cone and zigzag InN [36][37] , AlN [38] , GaN [39] and ZnO [40] nanostructures. 5 (e).…”

Section: Resultssupporting

confidence: 68%

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

et al. 2015

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Novel indium nitride (InN) based nanomaterial is important for high speed electronics and infrared optoelectronics. In this paper, high quality Indium nitride (InN) nanostructures including nanowires and nanonecklaces, have been grown on one substrate by chemical vapor deposition. The morphologies and microstructures of InN nanowires and nanonecklaces were characterized, which confirmed their chemical composition as well as single crystallinity. The InN nanonecklaces consist of multiple beads composed of two equilateral truncated hexagonal cones faceted with { } 1 1 10 and { } 1 1 10 planes. The growth mechanism of the InN nanonecklace was studied and a three-step process was suggested for the growth. Finally, room temperature photoluminescence spectra of the two nanostructures showed the near band edge emissions of around 0.73 eV, where the emission from nanonecklace was found to be stronger, indicating the promise for near-infrared optoelectronics applications.Group III nitride semiconductors are extensively studied materials in the last two decades for broad technologies ranging from light emitters to fast electronics. Among them, much effort was dedicated to the study of InN for its distinguished physical and chemical properties [1][2][3][4][5] , especially the high electrical conductivity and electron mobility. These merits may lead to potential applications in high speed electronic devices, terahertz spectroscopy [6] , biosensors [7] , solar cells [8] , Fig. 5 TEM and HRTEM images of the InN nanowire and InN nanonecklace. (a) TEM image of an individual nanowire, (b) The corresponding HRTEM image and SAED pattern of the nanowire. (c) TEM image of an individual nanonecklace, (d) The corresponding HRTEM image and FFT pattern of the nanonecklace. (e) Space-filling model of ideal [0001] nanonecklace and schematic representation of Miller indexing of the various faces of crystal (left) and the corresponding crystal unit of the InN nanonecklace (right).Moreover, it should be noted that the above theoretical analysis is based on stoichiometric and ideal slow growth condition. In reality, the growth is also subject to other factors. In the case here, the In/N source ratio would render drastically different growth patterns like nanowires/nanonecklace. This phenomenon is commonly occurred in nanomaterial growth. For example, one CVD growth can yield six different morphologies in Gallium Sulfide structures [41] .Here the detailed theoretical analysis beyond BFDH method is not conducted, since this report is mainly focused on the experiment growth demonstration of peculiar InN nanostructures. 1 1 10 planes possess finite charges and dipole moments, they will give a rise to inversely positive and negative electrostatic surface energy. To keep the overall structure stable, the total surface free energy including the electrostatic surface energy and the surface

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“…Since the inclusion of the zincblende phase in the films apparently caused by interfacial reactions [22], it should be possible to suppress it by inserting a reaction blocking layer between GaN and graphene. In this study, we introduced a 50-nm-thick AlN interlayer as a reaction-blocking layer before GaN growth on graphene.…”

Section: Growth and Characterization Of Gan Filmsmentioning

confidence: 99%

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

Ohta

Shon

Ueno

et al. 2017

IEICE Trans. Electron.

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SUMMARYCrystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axisoriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.

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Synthesis, Microstructure, and Cathodoluminescence of [0001]-Oriented GaN Nanorods Grown on Conductive Graphite Substrate

Cited by 33 publications

References 48 publications

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

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